BCR133E6327XT

Mfr. #:: BCR133E6327XT
Manufacturer:: Infineon Technologies
Description:: Bipolar Transistors - Pre-Biased AF TRANS DIGITAL BJT NPN 50V 100MA
Lifecycle:: New from this manufacturer.
Datasheet:: BCR133E6327XT Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: Bipolar Transistors - Pre-Biased

RoHS:: Y

Transistor Polarity:: NPN

Mounting Style:: SMD/SMT

Package / Case:: SOT-23

DC Collector/Base Gain hfe Min:: 30

Collector- Emitter Voltage VCEO Max:: 50 V

Continuous Collector Current:: 100 mA

Pd - Power Dissipation:: 200 mW

Maximum Operating Temperature:: + 150 C

Packaging:: Reel

Brand:: Infineon Technologies

Product Type:: BJTs - Bipolar Transistors - Pre-Biased

Qualification:: AEC-Q101

Factory Pack Quantity:: 3000

Subcategory:: Transistors

Part # Aliases:: 133 BCR BCR133E6327HTSA1 E6327 SP000010757

Unit Weight:: 0.000282 oz

Tags: BCR133E632, BCR133E63, BCR133E, BCR133, BCR13, BCR1, BCR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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BCR133E6327XT Description

*** Electronic Components: Bipolar Transistors - Pre-Biased AF TRANS DIGITAL BJT NPN 50V 100MA

***hard Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ical: Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R

***ure Electronics: MMBT2222 Series NPN 350 mW 40 V 600 mA SMT Small Signal Transistor - SOT-23

***p One Stop Global: Trans GP BJT NPN 40V 0.6A 350mW Automotive 3-Pin SOT-23 T/R

***icontronic: Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon

***eco: @BIPOLAR TRANSISTOR NPN SOT-23 RING TERMINAL

***sible Micro: Transistor, NPN, 40V, 600mA, 300MHz, 310mW, SOT-23-3, SMD

***ter Electronics: BIPOLAR TRANSISTOR NPN SOT-23 ROHS 3K

***essParts.Net: DIODES INC MMBT2222A-7-F / TRANS NPN 40V 350MW SMD SOT23-3 DIODES I

***ment14 APAC: Transistor, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:300mW;

***nell: TRANSISTOR, NPN, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 300mW; DC Collector Current: 600mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 1V; Current Ic Continuous a Max: 600mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

*** Source Electronics: TRANS NPN 45V 0.8A SOT23-3 / Trans GP BJT NPN 45V 0.5A 350mW 3-Pin SOT-23 T/R

***ure Electronics: BC817-40 Series NPN 45 V 310 mW Small Signal Transisitor Surface Mount -SOT-23-3

***el Electronic: DIODES INC. - BC817-40-7-F - Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 310 mW, 500 mA, 250 hFE

***(Formerly Allied Electronics): Transistor NPN 0.8A 45V 250hfe SOT23 | Diodes Inc BC817-40-7-F

***ment14 APAC: Transistor,NPN,45V,0.5A,SOT23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation

***nell: TRANSISTOR,NPN,45V,0.5A,SOT23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 310mW; DC Collector Current: 500mA; DC Current Gain hFE: 250hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Gain Bandwidth ft Typ: 100MHz; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C

***hard Electronics: DIODES INC. - BC847B-7-F - Bipolar (BJT) Single Transistor, NPN, 45 V, 300 MHz, 300 mW, 100 mA, 330 hFE

***p One Stop Global: Trans GP BJT NPN 45V 0.1A 350mW Automotive 3-Pin SOT-23 T/R

***ure Electronics: BC847B Series NPN 45 V 300 mW Small Signal Transisitor Surface Mount -SOT-23-3

***roFlash: Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon

***(Formerly Allied Electronics): Transistor NPN 0.1A 45V 200hfe SOT23 | Diodes Inc BC847B-7-F

***ment14 APAC: Transistor, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:300MHz; Power Dissipation Pd:300mW;

***nell: TRANSISTOR, NPN, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 300mW; DC Collector Current: 100mA; DC Current Gain hFE: 330hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 600mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 200; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

***ure Electronics: KST10 Series NPN 350 mW 25 V 650 MHz Epitaxial Silicon Transistor - SOT-23-3

*** Electronic Components: Bipolar Transistors - BJT NPN Si Transistor Epitaxial

***r Electronics: RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN

***ow.cn: Trans RF BJT NPN 25V 350mW 3-Pin SOT-23 T/R

***nell: TRANS, RF, NPN, 25V, 650MHZ, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 650MHz; Power Dissipation Pd: 350mW; DC Collector Current: -; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: -; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***ure Electronics: KSC3265 Series 25 V CE Breakdown .8 A NPN Epitaxial Silicon Transistor - SOT-23

***r Electronics: Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon

***ow.cn: Trans GP BJT NPN 25V 0.8A 200mW 3-Pin SOT-23 T/R

***i-Key: TRANSISTOR NPN 25V 800MA SOT-23

***nell: TRANSISTOR, BIPOL, NPN, 25V, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 120MHz; Power Dissipation Pd: 200mW; DC Collector Current: 800mA; DC Current Gain hFE: 160hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

*** Electronic Components: Bipolar Transistors - BJT Switching Transistor NPN

***ure Electronics: BSV52 Series 12 V 200 mA NPN Surface Mount Switching Transistor - SOT-23-3

***r Electronics: Small Signal Bipolar Transistor, 0.2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon

***et: Trans GP BJT NPN 12V 0.2A 3-Pin SOT-23 T/R

***ment14 APAC: BIPOLAR Transistor, NPN, 12V; Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition

***i-Key: TRANSISTOR NPN 12V 200MA SOT-23

***enic: 12V 225mW 200mA 40@10mA1V 400MHz 400mV@50mA5mA NPN -55¡Í~+150¡Í@(Tj) SOT-23-3 Bipolar Transistors - BJT ROHS

***rchild Semiconductor: This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21.

Market price

Part #	Mfg.	Description	Stock	Price
BCR133E6327HTSA1 DISTI # BCR133E6327HTSA1TR-ND	Infineon Technologies AG	TRANS PREBIAS NPN 200MW SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	66000In Stock	150000:$0.0211 75000:$0.0238 30000:$0.0254 15000:$0.0270 6000:$0.0317 3000:$0.0365
BCR133E6327XT DISTI # 726-BCR133E6327XT	Infineon Technologies AG	Bipolar Transistors - Pre-Biased AF TRANS DIGITAL BJT NPN 50V 100MA RoHS: Compliant	73610	1:$0.1900 10:$0.1770 100:$0.0630 1000:$0.0420 3000:$0.0320 9000:$0.0280 24000:$0.0250 45000:$0.0220 99000:$0.0190
BCR 133 E6327 DISTI # 726-BCR133E6327	Infineon Technologies AG	Bipolar Transistors - Pre-Biased AF TRANS DIGITAL BJT NPN 50V 100MA RoHS: Compliant	59250	1:$0.1900 10:$0.1770 100:$0.0630 1000:$0.0420 3000:$0.0320 9000:$0.0280 24000:$0.0250 45000:$0.0220
BCR133E6327HTSA1 DISTI # 726-BCR133E6327HTSA1	Infineon Technologies AG	Bipolar Transistors - Pre-Biased AF TRANS DIGITAL BJT NPN 50V 100MA RoHS: Compliant	61815	1:$0.2000 10:$0.1360 100:$0.0570 1000:$0.0390 3000:$0.0310 9000:$0.0260 24000:$0.0250 45000:$0.0230 99000:$0.0220

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Availability

Stock:: 73
On Order:: 2056
Enter Quantity:

Current price of BCR133E6327XT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.19~~; ~~$0.19~~

10: ~~$0.18~~; ~~$1.77~~

100: ~~$0.06~~; ~~$6.30~~

1000: ~~$0.04~~; ~~$42.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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BCR133E6327XT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes