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FP35R12U1T4

FP35R12U1T4
Mfr. #:
FP35R12U1T4
Manufacturer:
Infineon Technologies
Description:
IGBT Modules IGBT Module 35A 1200V
Lifecycle:
New from this manufacturer.
Datasheet:
FP35R12U1T4 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FP35R12U1T4 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Modules
RoHS:
Y
Product:
IGBT Silicon Modules
Configuration:
PIM 3-Phase Input Rectifier
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
1.85 V
Continuous Collector Current at 25 C:
54 A
Gate-Emitter Leakage Current:
400 nA
Pd - Power Dissipation:
250 W
Package / Case:
SmartPIM1
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tray
Brand:
Infineon Technologies
Mounting Style:
Chassis Mount
Maximum Gate Emitter Voltage:
20 V
Product Type:
IGBT Modules
Factory Pack Quantity:
30
Subcategory:
IGBTs
Part # Aliases:
FP35R12U1T4BPSA1 SP000663678
Tags
FP35R, FP35, FP3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
SmartPIM 1 IGBT Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT/NTC
***ment14 APAC
IGBT, LOW POWER NTC, 1200V, 35A, PIM; Transistor Polarity:N Channel; DC Collector Current:35A; Collector Emitter Voltage Vces:1.85V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:23; Power Dissipation Max:250W
***ineon
1200V SmartPIM 1 IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Low Switching Losses; Trench IGBT 4; T(vj io) = 150C; Low V(cesat); AI(2)O(3) Substrate for Low Thermal Resistance; Rugged Duplex frame construction; Self-acting PressFIT Assembly | Benefits: Safe and simple mounting process; Reduced assembly time; Reliable connection of module Pins and PCB; Flexible mounting possibilities | Target Applications: drives; aircon
Infineon SmartPIM & SmartPACK IGBTs
Infineon's SmartPIM & SmartPACK IGBTs are designed to fulfill the challenges for the inverter assembly and the reliability of the whole system. These devices come with a sophisticated mounting concept and combines the existing PressFIT contact with a very basic mounting and assembly technology of an inverter. The brand-new housing allows connecting the module with the heat sink and the PCB in a single step mounting process. In the Smart1 this easy mounting concept is realized by using one screw only. During this mounting process, the PressFIT pin is pressed into the PCB, the PCB is stabilized and the module is mounted in the same step on the surface of the heat sink. The whole mounting concept needs no additional tools; only an electrical screw driver is used. All well known electrical circuits are feasible. The possible current range in the housing reaches up to 75A.Learn More
Part # Mfg. Description Stock Price
FP35R12U1T4BPSA1
DISTI # FP35R12U1T4BPSA1-ND		Infineon Technologies AGIGBT MODULE VCES 1200V 35A
RoHS: Not compliant
Min Qty: 30
Container: Bulk		Limited Supply - Call
  • 30:$76.9440
FP35R12U1T4
DISTI # SP000663678		Infineon Technologies AGSmartPIM 1 IGBT Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT/NTC (Alt: SP000663678)
RoHS: Compliant
Min Qty: 1		Europe - 14
  • 1:€95.4900
  • 10:€77.1900
  • 25:€70.1900
  • 50:€67.7900
  • 100:€65.5900
  • 500:€63.6900
  • 1000:€62.1900
FP35R12U1T4
DISTI # SP000663678		Infineon Technologies AGSmartPIM 1 IGBT Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT/NTC (Alt: SP000663678)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€81.4900
  • 10:€74.6900
  • 25:€71.6900
  • 50:€68.8900
  • 100:€66.3900
  • 500:€63.9900
  • 1000:€59.6900
FP35R12U1T4BPSA1
DISTI # FP35R12U1T4BPSA1		Infineon Technologies AGLOW POWER SMART - Trays (Alt: FP35R12U1T4BPSA1)
RoHS: Compliant
Min Qty: 30
Container: Tray		Americas - 0
  • 30:$75.9900
  • 32:$73.1900
  • 62:$70.5900
  • 150:$68.1900
  • 300:$66.9900
FP35R12U1T4
DISTI # 641-FP35R12U1T4		Infineon Technologies AGIGBT Modules IGBT Module 35A 1200V
RoHS: Compliant		0
  • 1:$84.4000
  • 5:$82.8500
  • 10:$79.1200
  • 25:$76.4800
  • 100:$71.2200
FP35R12U1T4
DISTI # XSKDRABV0032947		Infineon Technologies AG 
RoHS: Compliant		24 in Stock0 on Order
  • 24:$95.0000
  • 5:$101.7900
Image Part # Description
EYG-S0407ZLAL

Mfr.#: EYG-S0407ZLAL

OMO.#: OMO-EYG-S0407ZLAL

 Thermal Interface Products Soft PGS - IGBT Mod Infineon
Availability
Stock:
Available
On Order:
2500
Enter Quantity:
Current price of FP35R12U1T4 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$84.40
$84.40
5
$82.85
$414.25
10
$79.12
$791.20
25
$76.48
$1 912.00
100
$71.22
$7 122.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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