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STGW30H65FB

STGW30H65FB
Mfr. #:
STGW30H65FB
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
Lifecycle:
New from this manufacturer.
Datasheet:
STGW30H65FB Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
STGW30H65FB more Information STGW30H65FB Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.75 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
30 A
Pd - Power Dissipation:
260 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
STGW30H65FB
Packaging:
Tube
Continuous Collector Current Ic Max:
60 A
Brand:
STMicroelectronics
Gate-Emitter Leakage Current:
250 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
600
Subcategory:
IGBTs
Unit Weight:
1.340411 oz
Tags
STGW30H, STGW30, STGW3, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
***ical
Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Part # Mfg. Description Stock Price
STGW30H65FB
DISTI # V99:2348_17621591		STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		480
  • 2500:$1.6510
  • 1000:$1.6740
  • 500:$2.0030
  • 250:$2.2620
  • 100:$2.3340
  • 10:$2.7460
  • 1:$3.5497
STGW30H65FB
DISTI # V36:1790_06560746		STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    STGW30H65FB
    DISTI # 497-14467-5-ND    		STMicroelectronicsIGBT 650V 30A 260W TO-247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		46In Stock
    • 2520:$1.7220
    • 510:$2.1439
    • 120:$2.5184
    • 30:$2.9060
    • 10:$3.0740
    • 1:$3.4200
    STGW30H65FB
    DISTI # 32021364    		STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		480
    • 2500:$1.7748
    • 1000:$1.7995
    • 500:$2.1532
    • 250:$2.4316
    • 100:$2.5090
    • 10:$2.9520
    • 4:$3.4690
    STGW30H65FB
    DISTI # STGW30H65FB    		STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube (Alt: STGW30H65FB)
    RoHS: Compliant
    Min Qty: 30
    Container: Tube    		Europe - 600
    • 180:€1.5900
    • 300:€1.5900
    • 60:€1.6900
    • 120:€1.6900
    • 30:€1.7900
    STGW30H65FB
    DISTI # STGW30H65FB    		STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW30H65FB)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 6000:$1.4900
    • 2400:$1.5900
    • 3600:$1.5900
    • 1200:$1.6900
    • 600:$1.7900
    STGW30H65FB
    DISTI # 55X3476    		STMicroelectronicsPTD HIGH VOLTAGE0
    • 500:$1.6000
    • 250:$1.6500
    • 100:$1.9700
    • 50:$2.2800
    • 25:$2.4300
    • 10:$2.7700
    • 1:$3.2000
    STGW30H65FB
    DISTI # 511-STGW30H65FB    		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
    RoHS: Compliant    		249
    • 1:$3.2500
    • 10:$2.7600
    • 100:$2.3900
    • 250:$2.2700
    • 500:$2.0400
    • 1000:$1.7200
    • 2500:$1.6300
    • 5000:$1.5700
    STGW30H65FBSTMicroelectronics 14499
      STGW30H65FB
      DISTI # XSKDRABV0027577      		STMicroelectronics 
      RoHS: Compliant      		480 in Stock0 on Order
      • 480:$2.7360
      • 300:$2.9280
      STGW30H65FBSTMicroelectronicsInsulated Gate Bipolar Transistor
      RoHS: Compliant      		Europe - 600
        STGW30H65FB
        DISTI # IGBT1561        		STMicroelectronicsIGBT 650V 30A 1,55VTO247-3Stock DE - 0Stock HK - 0Stock US - 0
        • 600:$1.8200
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        Mfr.#: RC0603FR-074K7L

        OMO.#: OMO-RC0603FR-074K7L-YAGEO

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        Availability
        Stock:
        249
        On Order:
        2232
        Enter Quantity:
        Current price of STGW30H65FB is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $3.25
        $3.25
        10
        $2.76
        $27.60
        100
        $2.39
        $239.00
        250
        $2.27
        $567.50
        500
        $2.04
        $1 020.00
        1000
        $1.72
        $1 720.00
        2500
        $1.63
        $4 075.00
        5000
        $1.57
        $7 850.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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