NE3515S02-T1D-A

NE3515S02-T1D-A
Mfr. #:
NE3515S02-T1D-A
Manufacturer:
CEL
Description:
RF JFET Transistors Super Low Noise Pseudomorphic
Lifecycle:
New from this manufacturer.
Datasheet:
NE3515S02-T1D-A Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
CEL
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
pHEMT
Technology:
GaAs
Gain:
12.5 dB
Vds - Drain-Source Breakdown Voltage:
4 V
Vgs - Gate-Source Breakdown Voltage:
- 3 V
Id - Continuous Drain Current:
88 mA
Maximum Operating Temperature:
+ 125 C
Pd - Power Dissipation:
165 mW
Mounting Style:
SMD/SMT
Package / Case:
S0-2
Packaging:
Reel
Operating Frequency:
12 GHz
Product:
RF JFET
Type:
GaAs pHEMT
Brand:
CEL
Forward Transconductance - Min:
70 mS
NF - Noise Figure:
0.3 dB
P1dB - Compression Point:
14 dBm
Product Type:
RF JFET Transistors
Factory Pack Quantity:
10000
Subcategory:
Transistors
Tags
NE3515, NE351, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
FET RF HFET 12GHZ 2V 10MA S02
Part # Mfg. Description Stock Price
NE3515S02-T1D-A
DISTI # NE3515S02-T1D-A-ND
California Eastern Laboratories (CEL)FET RF HFET 12GHZ 2V 10MA S02
RoHS: Compliant
Min Qty: 1
Container: Tape & Reel (TR)
Limited Supply - Call
    NE3515S02-T1D-A
    DISTI # 551-NE3515S02-T1D-A
    California Eastern Laboratories (CEL)RF JFET Transistors Super Low Noise Pseudomorphic
    RoHS: Compliant
    0
      Image Part # Description
      NE3515S02-T1C-A

      Mfr.#: NE3515S02-T1C-A

      OMO.#: OMO-NE3515S02-T1C-A

      RF JFET Transistors Super Low Noise Pseudomorphic
      NE3515S02-A

      Mfr.#: NE3515S02-A

      OMO.#: OMO-NE3515S02-A

      RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
      NE3515S02-T1D-A

      Mfr.#: NE3515S02-T1D-A

      OMO.#: OMO-NE3515S02-T1D-A

      RF JFET Transistors Super Low Noise Pseudomorphic
      NE3515S02-T1D-A

      Mfr.#: NE3515S02-T1D-A

      OMO.#: OMO-NE3515S02-T1D-A-CEL

      RF JFET Transistors Super Low Noise Pseudomorphic
      NE3515S02-A

      Mfr.#: NE3515S02-A

      OMO.#: OMO-NE3515S02-A-CEL

      RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
      NE3515S02-T1C-A

      Mfr.#: NE3515S02-T1C-A

      OMO.#: OMO-NE3515S02-T1C-A-CEL

      RF JFET Transistors Super Low Noise Pseudomorphic
      NE3515S02

      Mfr.#: NE3515S02

      OMO.#: OMO-NE3515S02-1190

      New and Original
      Availability
      Stock:
      Available
      On Order:
      3500
      Enter Quantity:
      Current price of NE3515S02-T1D-A is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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