PartNumber | NE3510M04-A | NE3511S02-A | NE3510M04-T2-A |
Description | RF JFET Transistors L-S Band Lo No Amp | RF JFET Transistors X to Ku Band Super Low Noise Amp N-Ch | RF JFET Transistors L-S Band Lo No Amp |
Manufacturer | CEL | CEL | CEL |
Product Category | RF JFET Transistors | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Transistor Type | HFET | HFET | HFET |
Technology | GaAs | GaAs | GaAs |
Gain | 16 dB | 13.5 dB | 16 dB |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 4 V | - | - |
Vgs Gate Source Breakdown Voltage | - 3 V | - | - |
Id Continuous Drain Current | 97 mA | - | - |
Maximum Operating Temperature | + 150 C | + 125 C | + 150 C |
Pd Power Dissipation | 125 mW | - | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | FTSMM-4 (M04) | - | - |
Operating Frequency | 4 GHz | 12 GHz | 4 GHz |
Product | RF JFET | - | - |
Type | GaAs HFET | - | - |
Brand | CEL | - | - |
Forward Transconductance Min | 70 mS | - | - |
Gate Source Cutoff Voltage | - 0.7 V | - 0.7 V | - |
NF Noise Figure | 0.45 dB | - | - |
P1dB Compression Point | 11 dBm | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 1 | - | - |
Subcategory | Transistors | - | - |
Package Case | - | S0-2 | FTSMM-4 (M04) |
Pd Power Dissipation | - | 165 mW | 125 mW |
Id Continuous Drain Current | - | 70 mA | 97 mA |
Vds Drain Source Breakdown Voltage | - | 4 V | 4 V |
Forward Transconductance Min | - | 65 mS | 70 mS |
Vgs Gate Source Breakdown Voltage | - | - 3 V | - 3 V |
NF Noise Figure | - | 0.3 dB | 0.45 dB |
Packaging | - | - | Reel |
P1dB Compression Point | - | - | 11 dBm |