NE3510M04-A

NE3510M04-A
Mfr. #:
NE3510M04-A
Manufacturer:
CEL
Description:
RF JFET Transistors L-S Band Lo No Amp
Lifecycle:
New from this manufacturer.
Datasheet:
NE3510M04-A Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE3510M04-A DatasheetNE3510M04-A Datasheet (P4-P6)NE3510M04-A Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
CEL
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HFET
Technology:
GaAs
Gain:
16 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
4 V
Vgs - Gate-Source Breakdown Voltage:
- 3 V
Id - Continuous Drain Current:
97 mA
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
125 mW
Mounting Style:
SMD/SMT
Package / Case:
FTSMM-4 (M04)
Operating Frequency:
4 GHz
Product:
RF JFET
Type:
GaAs HFET
Brand:
CEL
Forward Transconductance - Min:
70 mS
Gate-Source Cutoff Voltage:
- 0.7 V
NF - Noise Figure:
0.45 dB
P1dB - Compression Point:
11 dBm
Product Type:
RF JFET Transistors
Factory Pack Quantity:
1
Subcategory:
Transistors
Tags
NE3510, NE351, NE35, NE3
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans JFET N-CH 4V 97mA 4-Pin Thin-Type Super Mini-Mold
***i-Key
FET RF 4V 4GHZ M04
Part # Mfg. Description Stock Price
NE3510M04-A
DISTI # NE3510M04-A-ND
California Eastern Laboratories (CEL)FET RF 4V 4GHZ M04
RoHS: Compliant
Min Qty: 120
Container: Bulk
Limited Supply - Call
    NE3510M04-A
    DISTI # 551-NE3510M04-A
    California Eastern Laboratories (CEL)RF JFET Transistors L-S Band Lo No Amp
    RoHS: Compliant
    0
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      Availability
      Stock:
      Available
      On Order:
      1500
      Enter Quantity:
      Current price of NE3510M04-A is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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