PartNumber | NE3510M04-A | NE3510M04 | NE3510M04-07-T2 |
Description | RF JFET Transistors L-S Band Lo No Amp | ||
Manufacturer | CEL | CEL | - |
Product Category | RF JFET Transistors | Transistors - FETs, MOSFETs - Single | - |
RoHS | Y | - | - |
Transistor Type | HFET | HFET | - |
Technology | GaAs | GaAs | - |
Gain | 16 dB | 16 dB | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 4 V | - | - |
Vgs Gate Source Breakdown Voltage | - 3 V | - | - |
Id Continuous Drain Current | 97 mA | - | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 125 mW | - | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | FTSMM-4 (M04) | - | - |
Operating Frequency | 4 GHz | 4 GHz | - |
Product | RF JFET | - | - |
Type | GaAs HFET | - | - |
Brand | CEL | - | - |
Forward Transconductance Min | 70 mS | - | - |
Gate Source Cutoff Voltage | - 0.7 V | - 0.7 V | - |
NF Noise Figure | 0.45 dB | - | - |
P1dB Compression Point | 11 dBm | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 1 | - | - |
Subcategory | Transistors | - | - |
Package Case | - | FTSMM-4 (M04) | - |
Pd Power Dissipation | - | 125 mW | - |
Id Continuous Drain Current | - | 97 mA | - |
Vds Drain Source Breakdown Voltage | - | 4 V | - |
Forward Transconductance Min | - | 70 mS | - |
Vgs Gate Source Breakdown Voltage | - | - 3 V | - |
NF Noise Figure | - | 0.45 dB | - |
P1dB Compression Point | - | 11 dBm | - |