NE3512S02-T1C-A

NE3512S02-T1C-A
Mfr. #:
NE3512S02-T1C-A
Manufacturer:
CEL
Description:
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
Lifecycle:
New from this manufacturer.
Datasheet:
NE3512S02-T1C-A Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE3512S02-T1C-A DatasheetNE3512S02-T1C-A Datasheet (P4-P6)NE3512S02-T1C-A Datasheet (P7-P8)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
CEL
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HFET
Technology:
GaAs
Gain:
13.5 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
4 V
Vgs - Gate-Source Breakdown Voltage:
- 3 V
Id - Continuous Drain Current:
70 mA
Maximum Operating Temperature:
+ 125 C
Pd - Power Dissipation:
165 mW
Mounting Style:
SMD/SMT
Package / Case:
S0-2
Packaging:
Reel
Operating Frequency:
12 GHz
Product:
RF JFET
Type:
GaAs HFET
Brand:
CEL
Forward Transconductance - Min:
55 mS
NF - Noise Figure:
0.35 dB
Product Type:
RF JFET Transistors
Factory Pack Quantity:
2000
Subcategory:
Transistors
Tags
NE3512S02-T, NE3512, NE351, NE35, NE3
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans RF MOSFET N-CH 4V 0.07A 4-Pin Case S-02 T/R / HJ-FET NCH 13.5DB S02
***ical
Trans JFET N-CH 4V 70mA HJFET 4-Pin Case S-02 T/R
Part # Mfg. Description Stock Price
NE3512S02-T1C-A
DISTI # NE3512S02-T1C-ATR-ND
California Eastern Laboratories (CEL)HJ-FET NCH 13.5DB S02
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Limited Supply - Call
    NE3512S02-T1C-A
    DISTI # NE3512S02-T1C-ACT-ND
    California Eastern Laboratories (CEL)HJ-FET NCH 13.5DB S02
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      NE3512S02-T1C-A
      DISTI # NE3512S02-T1C-ADKR-ND
      California Eastern Laboratories (CEL)HJ-FET NCH 13.5DB S02
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        NE3512S02-T1C-ARenesas Electronics Corporation 
        RoHS: Not Compliant
        8000
        • 1000:$0.5900
        • 500:$0.6200
        • 100:$0.6500
        • 25:$0.6800
        • 1:$0.7300
        NE3512S02-T1C-A
        DISTI # 551-NE3512S02-T1C-A
        California Eastern Laboratories (CEL)RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
        RoHS: Compliant
        0
          Image Part # Description
          NE3512S02-T1C-A

          Mfr.#: NE3512S02-T1C-A

          OMO.#: OMO-NE3512S02-T1C-A

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          OMO.#: OMO-NE3512S02-T1D-A-318

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          Mfr.#: NE3512S02-T1D-AJT

          OMO.#: OMO-NE3512S02-T1D-AJT-1190

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          OMO.#: OMO-NE3512S02-1190

          New and Original
          NE3512S02-T1

          Mfr.#: NE3512S02-T1

          OMO.#: OMO-NE3512S02-T1-1190

          New and Original
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          Mfr.#: NE3512S02-T1B

          OMO.#: OMO-NE3512S02-T1B-1190

          New and Original
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          Mfr.#: NE3512S02-T1C

          OMO.#: OMO-NE3512S02-T1C-1190

          New and Original
          NE3512S02-T1D-A/JT

          Mfr.#: NE3512S02-T1D-A/JT

          OMO.#: OMO-NE3512S02-T1D-A-JT-1190

          New and Original
          Availability
          Stock:
          Available
          On Order:
          3000
          Enter Quantity:
          Current price of NE3512S02-T1C-A is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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