NE3512S02-T1D-A

NE3512S02-T1D-A
Mfr. #:
NE3512S02-T1D-A
Manufacturer:
Rochester Electronics, LLC
Description:
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
Lifecycle:
New from this manufacturer.
Datasheet:
NE3512S02-T1D-A Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
RENESAS
Product Category
IC Chips
Packaging
Reel
Mounting-Style
SMD/SMT
Package-Case
S0-2
Technology
GaAs
Transistor-Type
HFET
Gain
13.5 dB
Pd-Power-Dissipation
165 mW
Maximum-Operating-Temperature
+ 125 C
Operating-Frequency
12 GHz
Id-Continuous-Drain-Current
70 mA
Vds-Drain-Source-Breakdown-Voltage
4 V
Transistor-Polarity
N-Channel
Forward-Transconductance-Min
55 mS
Vgs-Gate-Source-Breakdown-Voltage
- 3 V
NF-Noise-Figure
0.35 dB
Tags
NE3512S02-T1D-A, NE3512S02-T1D, NE3512S02-T, NE3512, NE351, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET
***S
new, original packaged
***i-Key
HJ-FET NCH 13.5DB S02
Part # Mfg. Description Stock Price
NE3512S02-T1D-A
DISTI # 551-NE3512S02-T1D-A
California Eastern Laboratories (CEL)RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
RoHS: Compliant
0
    Image Part # Description
    NE3512S02-T1C-A

    Mfr.#: NE3512S02-T1C-A

    OMO.#: OMO-NE3512S02-T1C-A

    RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
    NE3512S02-A

    Mfr.#: NE3512S02-A

    OMO.#: OMO-NE3512S02-A

    RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch
    NE3512S02-T1D-A

    Mfr.#: NE3512S02-T1D-A

    OMO.#: OMO-NE3512S02-T1D-A-318

    RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
    NE3512S02-T1C-A

    Mfr.#: NE3512S02-T1C-A

    OMO.#: OMO-NE3512S02-T1C-A-CEL

    RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
    NE3512S02-T1D-AJT

    Mfr.#: NE3512S02-T1D-AJT

    OMO.#: OMO-NE3512S02-T1D-AJT-1190

    New and Original
    NE3512S02

    Mfr.#: NE3512S02

    OMO.#: OMO-NE3512S02-1190

    New and Original
    NE3512S02-T1

    Mfr.#: NE3512S02-T1

    OMO.#: OMO-NE3512S02-T1-1190

    New and Original
    NE3512S02-T1B

    Mfr.#: NE3512S02-T1B

    OMO.#: OMO-NE3512S02-T1B-1190

    New and Original
    NE3512S02-T1C

    Mfr.#: NE3512S02-T1C

    OMO.#: OMO-NE3512S02-T1C-1190

    New and Original
    NE3512S02-T1D-A/JT

    Mfr.#: NE3512S02-T1D-A/JT

    OMO.#: OMO-NE3512S02-T1D-A-JT-1190

    New and Original
    Availability
    Stock:
    Available
    On Order:
    4500
    Enter Quantity:
    Current price of NE3512S02-T1D-A is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.88
    $0.88
    10
    $0.84
    $8.41
    100
    $0.80
    $79.65
    500
    $0.75
    $376.15
    1000
    $0.71
    $708.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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