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| PartNumber | NE3512S02-T1D-A | NE3512S02-T1D | NE3512S02-T1D-A/JT |
| Description | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET | ||
| Manufacturer | RENESAS | NEC | |
| Product Category | IC Chips | IC Chips | IC Chips |
| Packaging | Reel | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | S0-2 | - | - |
| Technology | GaAs | - | - |
| Transistor Type | HFET | - | - |
| Gain | 13.5 dB | - | - |
| Pd Power Dissipation | 165 mW | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Operating Frequency | 12 GHz | - | - |
| Id Continuous Drain Current | 70 mA | - | - |
| Vds Drain Source Breakdown Voltage | 4 V | - | - |
| Transistor Polarity | N-Channel | - | - |
| Forward Transconductance Min | 55 mS | - | - |
| Vgs Gate Source Breakdown Voltage | - 3 V | - | - |
| NF Noise Figure | 0.35 dB | - | - |