NE3512S02-A

NE3512S02-A
Mfr. #:
NE3512S02-A
Manufacturer:
CEL
Description:
RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch
Lifecycle:
New from this manufacturer.
Datasheet:
NE3512S02-A Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE3512S02-A DatasheetNE3512S02-A Datasheet (P4-P6)NE3512S02-A Datasheet (P7-P8)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
CEL
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HFET
Technology:
GaAs
Gain:
13.5 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
4 V
Vgs - Gate-Source Breakdown Voltage:
- 3 V
Id - Continuous Drain Current:
70 mA
Maximum Operating Temperature:
+ 125 C
Pd - Power Dissipation:
165 mW
Mounting Style:
SMD/SMT
Package / Case:
S0-2
Operating Frequency:
12 GHz
Product:
RF JFET
Type:
GaAs HFET
Brand:
CEL
Forward Transconductance - Min:
55 mS
Gate-Source Cutoff Voltage:
4 V
NF - Noise Figure:
0.35 dB
Product Type:
RF JFET Transistors
Factory Pack Quantity:
1
Subcategory:
Transistors
Tags
NE3512, NE351, NE35, NE3
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans JFET N-CH 4V 70mA 4-Pin Micro-X
***i-Key
HJ-FET NCH 13.5DB S02
Part # Mfg. Description Stock Price
NE3512S02-A
DISTI # NE3512S02-A-ND
California Eastern Laboratories (CEL)HJ-FET NCH 13.5DB S02
RoHS: Compliant
Min Qty: 90
Container: Bulk
Limited Supply - Call
    NE3512S02-A
    DISTI # 551-NE3512S02-A
    California Eastern Laboratories (CEL)RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch
    RoHS: Compliant
    0
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      Availability
      Stock:
      Available
      On Order:
      3000
      Enter Quantity:
      Current price of NE3512S02-A is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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