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NE3512S02-A

P1-P3P4-P6P7-P8
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3512S02
C TO Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
Document No. PG10592EJ01V0DS (1st edition)
Date Published February 2006 CP(N)
FEATURES
• Super low noise figure and high associated gain
NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz
• Micro-X plastic (S02) package
APPLICATIONS
• C to Ku-band DBS LNB
• Other C to Ku-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
Supplying Form
NE3512S02-T1C
NE3512S02-T1C-A
S02 (Pb-Free)
2 kpcs/reel
C
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
NE3512S02-T1D
NE3512S02-T1D-A
10 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3512S02-A
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Symbol
Ratings
Unit
VDS
4
V
VGS
3
V
ID
IDSS
mA
IG
100
A
Ptot
Note
165
mW
Tch
+125
C
Tstg
65 to +125
C
Note Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB
Data Sheet PG10592EJ01V0DS
2
NE3512S02
RECOMMENDED OPERATING CONDITIONS (TA = +25C)
Symbol
MIN.
TYP.
MAX.
Unit
VDS
1
2
3
V
ID
5
10
15
mA
Pin
0
dBm
ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
IGSO
VGS = 3 V
0.5
10
A
IDSS
VDS = 2 V, VGS = 0 V
15
40
70
mA
VGS (off)
VDS = 2 V, ID = 100
A
0.2
0.7
2.0
V
gm
VDS = 2 V, ID = 10 mA
40
55
mS
NF
VDS = 2 V, ID = 10 mA, f = 12 GHz
0.35
0.5
dB
Ga
12.5
13.5
dB
Data Sheet PG10592EJ01V0DS
3
NE3512S02
TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
P1-P3P4-P6P7-P8

NE3512S02-A

Mfr. #:
Buy NE3512S02-A
Manufacturer:
CEL
Description:
RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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