NE3515 stock, NE3515, NE3515S02-T1C-A


PartNumber	NE3515S02-T1C-A	NE3515S02-A	NE3515S02-T1D-A
Description	RF JFET Transistors Super Low Noise Pseudomorphic	RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH	RF JFET Transistors Super Low Noise Pseudomorphic
Manufacturer	CEL	CEL	CEL
Product Category	RF JFET Transistors	RF JFET Transistors	RF JFET Transistors
RoHS	Y	Y	Y
Transistor Type	pHEMT	pHEMT	pHEMT
Technology	GaAs	GaAs	GaAs
Gain	12.5 dB	12.5 dB	12.5 dB
Vds Drain Source Breakdown Voltage	4 V	4 V	4 V
Vgs Gate Source Breakdown Voltage	- 3 V	- 3 V	- 3 V
Id Continuous Drain Current	88 mA	88 mA	88 mA
Maximum Operating Temperature	+ 125 C	+ 125 C	+ 125 C
Pd Power Dissipation	165 mW	165 mW	165 mW
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	S0-2	S0-2	S0-2
Packaging	Reel	Cut Tape	Reel
Operating Frequency	12 GHz	12 GHz	12 GHz
Product	RF JFET	RF JFET	RF JFET
Type	GaAs pHEMT	GaAs pHEMT	GaAs pHEMT
Brand	CEL	CEL	CEL
Forward Transconductance Min	70 mS	70 mS	70 mS
NF Noise Figure	0.3 dB	0.3 dB	0.3 dB
P1dB Compression Point	14 dBm	14 dBm	14 dBm
Product Type	RF JFET Transistors	RF JFET Transistors	RF JFET Transistors
Factory Pack Quantity	2000	1	10000
Subcategory	Transistors	Transistors	Transistors

Search Part Number : "NE3515", Match & Start with "NE3515" - Total : 7

Manufacturer	Part #	Description
CEL	NE3515S02-T1C-A	RF JFET Transistors Super Low Noise Pseudomorphic
	NE3515S02-A	RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
	NE3515S02-T1D-A	RF JFET Transistors Super Low Noise Pseudomorphic
	NE3515S02-T1D-A	RF JFET Transistors Super Low Noise Pseudomorphic
	NE3515S02-A	RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
	NE3515S02-T1C-A	RF JFET Transistors Super Low Noise Pseudomorphic
	NE3515S02	New and Original

NE3515