BSC105N10LSFGATMA1

Mfr. #:: BSC105N10LSFGATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET MV POWER MOS
Lifecycle:: New from this manufacturer.
Datasheet:: BSC105N10LSFGATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TDSON-8

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.27 mm

Length:: 5.9 mm

Width:: 5.15 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Subcategory:: MOSFETs

Part # Aliases:: BSC105N10LSF BSC15N1LSFGXT G SP000388502

Tags: BSC105N10LSF, BSC105, BSC10, BSC1, BSC

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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BSC105N10LSFGATMA1 Description

***ure Electronics: Single N-Channel 100 V 10.5 mOhm 40 nC OptiMOS Power Mosfet - TDSON-8

***ical: Trans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS

***ment14 APAC: MOSFET, N CH, 90A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:90A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***emi: N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 100V, 60A, 7.5mΩ

***ark: TAPE REEL/PT5 100V/20V Nch Dual Cool PowerTrench MOSFET.

***nell: MOSFET, N-CH, 100V, 60A, DUAL COOL 56-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:

***roFlash: Power Field-Effect Transistor, 14.5A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***el Electronic: Embedded - Microcontrollers 3 (168 Hours) 48-WFQFN Exposed Pad 34 32K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 16-Bit IC MCU 16BIT 512KB FLASH 48HWQFN

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process thatincorporates Shielded Gate technology. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

***ure Electronics: Single N-Channel 100 V 7.9 mOhm 66 nC OptiMOS Power Mosfet - TDSON-8

***ical: Trans MOSFET N-CH 100V 13.4A Automotive 8-Pin TDSON EP T/R

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS

***ment14 APAC: MOSFET, N CH, 100A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):6.6mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:100A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ure Electronics: Single N-Channel 100 V 10 mOhm 44 nC OptiMOS Power Mosfet - TDSON-8

***ow.cn: BSC100N10NSFGATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R - Arrow.com

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS

***ment14 APAC: MOSFET, N CH, 90A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:156W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:90A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***emi: N-Channel PowerTrench® MOSFET 100V, 60A, 8mΩ

***ure Electronics: FDMS86101 Series 100 V 60 A 8 mOhm N-Channel PowerTrench® MOSFET - POWER-56

***roFlash: Power Field-Effect Transistor, 12.4A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***ment14 APAC: MOSFET,N CH,100V,12.4A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0084ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (20-Jun-2011)

***ure Electronics: Single N-Channel 100 V 12.3 mOhm 51 nC OptiMOS Power Mosfet - TDSON-8

***roFlash: Power Field-Effect Transistor, 10.6A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS

***ment14 APAC: MOSFET, N CH, 71A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.85V; Power Dissipation Pd:114W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:71A; Power Dissipation Pd:114W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***emi: N-Channel Shielded Gate PowerTrench® MOSFET 80V, 60A, 7.65mΩ

***ure Electronics: N-Channel 80 V 7.65 mO 55 nC SMT PowerTrench® Mosfet - PQFN-8

***r Electronics: Power Field-Effect Transistor, 13A I(D), 80V, 0.00765ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***nell: MOSFET, N CH, 80V, 60A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0061ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Market price

Part #	Mfg.	Description	Stock	Price
BSC105N10LSFGATMA1 DISTI # 32637758	Infineon Technologies AG	Trans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	5000	5000:$1.6799
BSC105N10LSFGATMA1 DISTI # BSC105N10LSFGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 90A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1933In Stock	1000:$1.6968 500:$2.0120 100:$2.3635 10:$2.8850 1:$3.2100
BSC105N10LSFGATMA1 DISTI # BSC105N10LSFGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 90A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1933In Stock	1000:$1.6968 500:$2.0120 100:$2.3635 10:$2.8850 1:$3.2100
BSC105N10LSFGATMA1 DISTI # BSC105N10LSFGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 90A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call	5000:$1.5062
BSC105N10LSFGATMA1 DISTI # V36:1790_06378314	Infineon Technologies AG	Trans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	0	5000000:$1.3050 2500000:$1.3070 500000:$1.3810 50000:$1.4890 5000:$1.5060
BSC105N10LSFGATMA1 DISTI # BSC105N10LSFGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 11.4A 8-Pin TDSON T/R - Bulk (Alt: BSC105N10LSFGATMA1) RoHS: Compliant Min Qty: 250 Container: Bulk	Americas - 0	1250:$1.1900 2500:$1.1900 500:$1.2900 750:$1.2900 250:$1.3900
BSC105N10LSFGATMA1 DISTI # BSC105N10LSFGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 11.4A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC105N10LSFGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	30000:$1.3900 50000:$1.3900 10000:$1.4900 20000:$1.4900 5000:$1.5900
BSC105N10LSFGATMA1 DISTI # SP000388502	Infineon Technologies AG	Trans MOSFET N-CH 100V 11.4A 8-Pin TDSON T/R (Alt: SP000388502) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€1.1900 30000:€1.2900 20000:€1.3900 10000:€1.4900 5000:€1.7900
BSC105N10LSF G DISTI # 726-BSC105N10LSFG	Infineon Technologies AG	MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 RoHS: Compliant	1905	1:$2.9600 10:$2.5200 100:$2.1800 250:$2.0700 500:$1.8600
BSC105N10LSFGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 11.4A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET RoHS: Compliant	1037	1000:$1.3200 500:$1.3900 100:$1.4400 25:$1.5000 1:$1.6200

Image	Part #	Description
	Mfr.#: BSC105N10LSF G OMO.#: OMO-BSC105N10LSF-G	MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
	Mfr.#: BSC105N10LSFGATMA1 OMO.#: OMO-BSC105N10LSFGATMA1	MOSFET MV POWER MOS
	Mfr.#: BSC105N10LS OMO.#: OMO-BSC105N10LS-1190	New and Original
	Mfr.#: BSC105N10LSFG OMO.#: OMO-BSC105N10LSFG-1190	New and Original
	Mfr.#: BSC105N10LSFGXT OMO.#: OMO-BSC105N10LSFGXT-1190	New and Original
	Mfr.#: BSC105N10LSFGATMA1-CUT TAPE OMO.#: OMO-BSC105N10LSFGATMA1-CUT-TAPE-1190	New and Original
	Mfr.#: BSC105N10LSFGATMA1 OMO.#: OMO-BSC105N10LSFGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 90A TDSON-8
	Mfr.#: BSC105N10LSF G OMO.#: OMO-BSC105N10LSF-G-128	MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2

BSC105N10LSFGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes