BSC105N10LSF G

BSC105N10LSF G
Mfr. #:
BSC105N10LSF G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
Lifecycle:
New from this manufacturer.
Datasheet:
BSC105N10LSF G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
90 A
Rds On - Drain-Source Resistance:
10.5 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
156 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
OptiMOS 2
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
26 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
37 ns
Typical Turn-On Delay Time:
15 ns
Part # Aliases:
BSC105N10LSFGATMA1 BSC15N1LSFGXT SP000388502
Tags
BSC105N10LSF, BSC105, BSC10, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
BSC105N10LSFGATMA1
DISTI # BSC105N10LSFGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3275In Stock
  • 1000:$1.7776
  • 500:$2.1078
  • 100:$2.6030
  • 10:$3.1740
  • 1:$3.5600
BSC105N10LSFGATMA1
DISTI # BSC105N10LSFGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3275In Stock
  • 1000:$1.7776
  • 500:$2.1078
  • 100:$2.6030
  • 10:$3.1740
  • 1:$3.5600
BSC105N10LSFGATMA1
DISTI # BSC105N10LSFGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$1.5779
BSC105N10LSFGATMA1
DISTI # BSC105N10LSFGATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC105N10LSFGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$1.5900
  • 10000:$1.4900
  • 20000:$1.4900
  • 30000:$1.3900
  • 50000:$1.3900
BSC105N10LSFGATMA1Infineon Technologies AGPower Field-Effect Transistor, 11.4A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
3850
  • 1000:$1.3000
  • 500:$1.3700
  • 100:$1.4300
  • 25:$1.4900
  • 1:$1.6000
BSC105N10LSF G
DISTI # 726-BSC105N10LSFG
Infineon Technologies AGMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
RoHS: Compliant
2387
  • 1:$2.9700
  • 10:$2.5300
  • 100:$2.1900
  • 250:$2.0800
  • 500:$1.8700
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Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of BSC105N10LSF G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.96
$2.96
10
$2.52
$25.20
100
$2.18
$218.00
250
$2.07
$517.50
500
$1.86
$930.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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