 |  | | |
| PartNumber | BSC105N10LSF G | BSC105N10LS | BSC105N10LSFG |
| Description | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 | ||
| Manufacturer | Infineon | FEELING | |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 90 A | - | - |
| Rds On Drain Source Resistance | 10.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 156 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 2 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 26 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 37 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | BSC105N10LSFGATMA1 BSC15N1LSFGXT SP000388502 | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC105N10LSF G | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 | |
| BSC105N10LSFGATMA1 | MOSFET N-CH 100V 90A TDSON-8 | ||
Infineon Technologies |
BSC105N10LSFGATMA1 | MOSFET MV POWER MOS | |
| BSC105N10LS | New and Original | ||
| BSC105N10LSFG | New and Original | ||
| BSC105N10LSFGXT | New and Original | ||
| BSC105N10LSFGATMA1-CUT TAPE | New and Original | ||
| BSC105N10LSF G | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 |