PD85004

Mfr. #:: PD85004
Manufacturer:: STMicroelectronics
Description:: RF MOSFET Transistors RF PWR TRANSISTOR
Lifecycle:: New from this manufacturer.
Datasheet:: PD85004 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: PD85004 more Information PD85004 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: RF MOSFET Transistors

RoHS:: Y

Transistor Polarity:: N-Channel

Technology:: Si

Id - Continuous Drain Current:: 2 A

Vds - Drain-Source Breakdown Voltage:: 40 V

Gain:: 17 dB

Output Power:: 4 W

Minimum Operating Temperature:: - 65 C

Maximum Operating Temperature:: + 150 C

Mounting Style:: SMD/SMT

Package / Case:: SOT-89-4

Packaging:: Reel

Configuration:: Single

Height:: 1.6 mm

Length:: 4.6 mm

Operating Frequency:: 1 GHz

Series:: PD85004

Type:: RF Power MOSFET

Width:: 2.6 mm

Brand:: STMicroelectronics

Channel Mode:: Enhancement

Moisture Sensitive:: Yes

Pd - Power Dissipation:: 6 W

Product Type:: RF MOSFET Transistors

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Vgs - Gate-Source Voltage:: 15 V

Unit Weight:: 0.004603 oz

Tags: PD8500, PD850, PD85, PD8

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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PD85004 Description

***ure Electronics: N-Channel 40 V 4 W Surface Mount LDMOS RF Mosfet - SOT-89

***icroelectronics: 4W 13.6V 870MHz LDMOS in SOT89 plastic package

***roFlash: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***ark: N CHANNEL RF POWERT TRANSISTOR, LdmoST, 40V, 2A, SOT-89; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2A; Power Dissipation:6W; Operating Frequency Min:-; Operating Frequency Max:-; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

***ure Electronics: PD84001 Series 870 MHz 6 W 18 V N-Channel RF Power Transistor - SOT-89

***et: Transistor RF FET N-CH 18V 1.5A 870MHz 4-Pin SOT-89 T/R

***ark: N CHANNEL RF POWER TRANSISTOR, LdmoST, 18V, 1.5A, SOT-89; Drain Source Voltage Vds:18V; Continuous Drain Current Id:1.5A; Power Dissipation:6W; Operating Frequency Min:-; Operating Frequency Max:1GHz; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes

***r Electronics: RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***ure Electronics: N-Channel 30 V 120 mOhm SMT Enhancement Mode Mosfet - SOT-89

***ical: Trans MOSFET N-CH 30V 3.3A Automotive 4-Pin(3+Tab) SOT-89 T/R

***ark: Mosfet, N-Ch, 30V, 3.3A, Sot-89 Rohs Compliant: Yes |Diodes Inc. ZXMN3A01ZTA

***p One Stop Global: Trans RF MOSFET N-CH 25V 2A 4-Pin(3+Tab) SOT-89 T/R

*** Electronic Components: RF MOSFET Transistors RF PWR transistor LdmoST plastic fam

***nell: MOSFET, RF, N-CH, 25V, 2A, SOT-89-3; Drain Source Voltage Vds: 25V; Continuous Drain Current Id: 2A; Power Dissipation Pd: 6W; Operating Frequency Min: -; Operating Frequency Max: 1GHz; RF Transistor Case: SOT-89; No. of Pins:

***r Electronics: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***et: Trans MOSFET P-CH 100V 1.5A 3-Pin PCP

***hard Electronics: 2SJ670 - P-CHANNEL SILICON MOSFE

***nell: MOSFET, P CH, 100V, 1.5A, SOT89; Transistor Polarity:P-Channel; Current Id Max:-1.5A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):410mohm; Rds(on) Test Voltage Vgs:-10V; Voltage Vgs Max:20V; Power Dissipation:3.5W; Transistor Case Style:SOT-89; No. of Pins:3

***ure Electronics: N-Channel 60 V 3.2 A 1 W Surface Mount OptiMOS Small-Signal-Transistor - SOT-89

***ow.cn: Trans MOSFET N-CH 60V 3.2A Automotive 4-Pin(3+Tab) SOT-89 T/R

***nell: MOSFET, AEC-Q101, N-CH, 60V, SOT-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 1W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.2 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 20 / Fall Time ns = 2.1 / Rise Time ns = 2.6 / Turn-OFF Delay Time ns = 13 / Turn-ON Delay Time ns = 5.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-89 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1

***hard Electronics: ON SEMICONDUCTOR PCP1402-TD-H MOSFET Transistor, N Channel, 1.2 A, 250 V, 1.8 ohm, 10 V, 3.5 V

***ure Electronics: Single N-Channel 250 V 3.5 W 4.2 nC Silicon Surface Mount Mosfet - SOT-89

***emi: Single N-Channel Power MOSFET, 250V, 1.2A, 2.4Ω

***ical: Trans MOSFET N-CH 250V 1.2A 4-Pin(3+Tab) SOT-89 T/R

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:1.2A; On Resistance Rds(On):1.8Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V Rohs Compliant: Yes

***nell: NCH 10V DRIVE SERIES; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.2A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 3.5W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Market price

Part #	Mfg.	Description	Stock	Price
PD85004 DISTI # 30702578	STMicroelectronics	Trans RF MOSFET N-CH 40V 2A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant	5000	2500:$1.5030
PD85004 DISTI # 497-8291-1-ND	STMicroelectronics	FET RF 40V 870MHZ RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8850In Stock	1000:$1.9980 500:$2.3247 100:$2.6892 10:$3.2300 1:$3.5700
PD85004 DISTI # 497-8291-6-ND	STMicroelectronics	FET RF 40V 870MHZ RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8850In Stock	1000:$1.9980 500:$2.3247 100:$2.6892 10:$3.2300 1:$3.5700
PD85004 DISTI # 497-8291-2-ND	STMicroelectronics	FET RF 40V 870MHZ RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	7500In Stock	5000:$1.7934 2500:$1.8544
PD85004 DISTI # PD85004	STMicroelectronics	Trans MOSFET N-CH 40V 2A 4-Pin(3+Tab) SOT-89 T/R (Alt: PD85004) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	1:€2.7900 10:€2.2500 100:€1.9600 250:€1.8600 500:€1.6500 1000:€1.4100
PD85004 DISTI # PD85004	STMicroelectronics	Trans MOSFET N-CH 40V 2A 4-Pin(3+Tab) SOT-89 T/R - Tape and Reel (Alt: PD85004) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$1.7900 5000:$1.6900 10000:$1.5900 15000:$1.4900 25000:$1.4900
PD85004 DISTI # 511-PD85004	STMicroelectronics	RF MOSFET Transistors RF PWR TRANSISTOR RoHS: Compliant	3547	1:$3.2300 10:$2.7500 100:$2.3800 250:$2.2600 500:$2.0300 1000:$1.7100 2500:$1.6300 5000:$1.5700
PD85004 DISTI # 8805355P	STMicroelectronics	RF POWER MOSFET N-CH 4W LDMOST SOT-89, RL	4765	25:£1.9900 100:£1.7240 250:£1.6360 500:£1.4600
PD85004 DISTI # 8805355	STMicroelectronics	RF POWER MOSFET N-CH 4W LDMOST SOT-89, PK	95	5:£2.5100 25:£1.9900 100:£1.7240 250:£1.6360 500:£1.4600
PD85004 DISTI # PD85004	STMicroelectronics	RF POWER TRANSISTOR RoHS: Compliant	0	2500:$1.7700
PD85004 DISTI # 2629762	STMicroelectronics	RF MOSFET, N-CH, 40V, SOT-89-3 RoHS: Compliant	0	1:£2.5000 10:£2.0300 100:£1.7500 250:£1.6700 500:£1.4900

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Availability

Stock:: Available
On Order:: 5500
Enter Quantity:

Current price of PD85004 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$3.23~~; ~~$3.23~~

10: ~~$2.75~~; ~~$27.50~~

100: ~~$2.38~~; ~~$238.00~~

250: ~~$2.26~~; ~~$565.00~~

500: ~~$2.03~~; ~~$1 015.00~~

1000: ~~$1.71~~; ~~$1 710.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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PD85004

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes