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BSC050N03LSGATMA1

BSC050N03LSGATMA1
Mfr. #:
BSC050N03LSGATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSC050N03LSGATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
4.2 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
35 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
50 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
38 S
Fall Time:
3.6 ns
Product Type:
MOSFET
Rise Time:
4 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
21 ns
Typical Turn-On Delay Time:
5.2 ns
Part # Aliases:
BSC050N03LS BSC5N3LSGXT G SP000269785
Unit Weight:
0.004194 oz
Tags
BSC050N03LSGA, BSC050N03LSG, BSC050N03L, BSC050N03, BSC050N0, BSC050N, BSC050, BSC05, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 7.5 mOhm 17 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 80A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:50W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Part # Mfg. Description Stock Price
BSC050N03LSGATMA1
DISTI # V36:1790_06390903		Infineon Technologies AGTrans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 25000:$0.2332
  • 10000:$0.2591
  • 5000:$0.2633
BSC050N03LSGATMA1
DISTI # V72:2272_06390903		Infineon Technologies AGTrans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
RoHS: Compliant		4500
  • 3000:$0.2410
  • 1000:$0.2896
  • 500:$0.3484
  • 250:$0.3524
  • 100:$0.3564
  • 25:$0.4963
  • 10:$0.5026
  • 1:$0.5797
BSC050N03LSGATMA1
DISTI # BSC050N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 80A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.3156
BSC050N03LSGATMA1
DISTI # BSC050N03LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 80A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.3852
  • 500:$0.4815
  • 100:$0.6501
  • 10:$0.8430
  • 1:$0.9600
BSC050N03LSGATMA1
DISTI # BSC050N03LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 80A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.3852
  • 500:$0.4815
  • 100:$0.6501
  • 10:$0.8430
  • 1:$0.9600
BSC050N03LSGATMA1
DISTI # 27516682		Infineon Technologies AGTrans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.2633
BSC050N03LSGATMA1
DISTI # 29517723		Infineon Technologies AGTrans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
RoHS: Compliant		4500
  • 250:$0.2668
  • 100:$0.3567
  • 30:$0.4968
BSC050N03LSGATMA1
DISTI # BSC050N03LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 18A 8-Pin TDSON EP - Tape and Reel (Alt: BSC050N03LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.2809
  • 10000:$0.2799
  • 20000:$0.2789
  • 30000:$0.2789
  • 50000:$0.2779
BSC050N03LSGATMA1
DISTI # 97Y1249		Infineon Technologies AGMOSFET, N-CH, 30V, 80A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes2210
  • 1:$0.8000
  • 10:$0.6590
  • 25:$0.5810
  • 50:$0.5030
  • 100:$0.4250
  • 250:$0.3970
  • 500:$0.3680
  • 1000:$0.3400
BSC050N03LSGXT
DISTI # 726-BSC050N03LSGXT		Infineon Technologies AGMOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
RoHS: Compliant		4810
  • 1:$0.8300
  • 10:$0.6890
  • 100:$0.4440
  • 1000:$0.3560
BSC050N03LSGATMA1
DISTI # 726-BSC050N03LSGATMA		Infineon Technologies AGMOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$0.8000
  • 10:$0.6590
  • 100:$0.4250
  • 1000:$0.3400
BSC050N03LS G
DISTI # 726-BSC050N03LSG		Infineon Technologies AGMOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$0.8100
  • 10:$0.6800
  • 100:$0.4400
  • 1000:$0.3500
BSC050N03LSGATMA1Infineon Technologies AGSingle N-Channel 30 V 7.5 mOhm 17 nC OptiMOS Power Mosfet - TDSON-8
RoHS: Not Compliant		5000Reel
  • 5000:$0.2600
BSC050N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 18A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		750
  • 1000:$0.2900
  • 500:$0.3100
  • 100:$0.3200
  • 25:$0.3300
  • 1:$0.3600
BSC050N03LSGATMA1
DISTI # 1702271		Infineon Technologies AGMOSFET N-CH 30V 80A 5M OPTIMOS3 TDSON8, RL9400
  • 5000:£0.2300
  • 10000:£0.2180
  • 15000:£0.2110
BSC050N03LSGATMA1
DISTI # 2617471		Infineon Technologies AGMOSFET, N-CH, 30V, 80A, PG-TDSON-8
RoHS: Compliant		2175
  • 5:£0.5200
  • 25:£0.4240
  • 100:£0.3270
  • 250:£0.3050
  • 500:£0.2820
BSC050N03LSGATMA1
DISTI # C1S322000464386		Infineon Technologies AGTrans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
RoHS: Compliant		10000
  • 10000:$0.2590
  • 5000:$0.2596
BSC050N03LSGATMA1
DISTI # 2617471		Infineon Technologies AGMOSFET, N-CH, 30V, 80A, PG-TDSON-8
RoHS: Compliant		2210
  • 1:$1.5400
  • 10:$1.3500
  • 100:$1.0400
  • 500:$0.7680
  • 1000:$0.6150
BSC050N03LSGATMA1
DISTI # 1775445		Infineon Technologies AGMOSFET, N CH, 80A, 30V, PG-TDSON-8
RoHS: Compliant		0
  • 1:$1.2900
  • 10:$1.0800
  • 100:$0.6970
  • 1000:$0.5540
  • 5000:$0.4980
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Availability
Stock:
Available
On Order:
1992
Enter Quantity:
Current price of BSC050N03LSGATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.79
$0.79
10
$0.66
$6.59
100
$0.42
$42.50
1000
$0.34
$340.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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