 | | | |
| PartNumber | BSC050N03LS G | BSC050N03LSGATMA1 | BSC050N03LSGXT |
| Description | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 80 A | 80 A | 80 A |
| Rds On Drain Source Resistance | 5 mOhms | 4.2 mOhms | 4.2 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
| Qg Gate Charge | 26 nC | 35 nC | 35 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 50 W | 50 W | 50 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 38 S | 38 S | 38 S |
| Fall Time | 3.6 ns | 3.6 ns | 3.6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4 ns | 4 ns | 4 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 21 ns | 21 ns | 21 ns |
| Typical Turn On Delay Time | 5.2 ns | 5.2 ns | 5.2 ns |
| Part # Aliases | BSC050N03LSGATMA1 BSC5N3LSGXT SP000269785 | BSC050N03LS BSC5N3LSGXT G SP000269785 | BSC050N03LS BSC050N03LSGATMA1 G SP000269785 |
| Unit Weight | 0.003527 oz | 0.004194 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC050N03LS G | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | |
| BSC050N04LS G | MOSFET N-Ch 40V 85A TDSON-8 OptiMOS 3 | ||
| BSC050NE2LS | MOSFET N-Ch 25V 58A TDSON-8 OptiMOS | ||
| BSC050NE2LSATMA1 | MOSFET N-Ch 25V 58A TDSON-8 OptiMOS | ||
| BSC050N03LSGATMA1 | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | ||
| BSC050N04LSGATMA1 | MOSFET N-Ch 40V 85A TDSON-8 OptiMOS 3 | ||
| BSC050N03LSGXT | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | ||
| BSC050N03MS G | MOSFET N-Ch 30V 80A TDSON-8 OptiMOS 3M | ||
| BSC050N03LSGATMA1 | MOSFET N-CH 30V 80A TDSON-8 | ||
| BSC050N03MSGATMA1 | MOSFET N-CH 30V 80A TDSON-8 | ||
| BSC050N04LSGATMA1 | MOSFET N-CH 40V 85A TDSON-8 | ||
| BSC050NE2LSATMA1 | MOSFET N-CH 25V 39A TDSON-8 | ||
| BSC050N10NS5ATMA1 | TRENCH >=100V | ||
| BSC050N03LS | New and Original | ||
| BSC050N03LS G | Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP | ||
| BSC050N03LSG | Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP | ||
| BSC050N03LSG 08 | New and Original | ||
| BSC050N03LSGATMA1 , TDA8 | New and Original | ||
| BSC050N03LSGXT | Power Field-Effect Transistor, 18A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC050N03MS | New and Original | ||
| BSC050N03MS G | MOSFET N-Ch 30V 80A TDSON-8 OptiMOS 3M | ||
| BSC050N03MSG | 30V,80A,N-channel power MOSFET | ||
| BSC050N03MSGATMA1 , TDA8 | New and Original | ||
| BSC050N03S | New and Original | ||
| BSC050N04LS | New and Original | ||
| BSC050N04LS G | New and Original | ||
| BSC050N04LSG | Trans MOSFET N-CH 40V 18A 8-Pin TDSON EP (Alt: BSC050N04LS G) | ||
| BSC050N04LSGATMA1 , TDA8 | New and Original | ||
| BSC050N08NS5 | New and Original | ||
| BSC050N0LSG | New and Original | ||
| BSC050NE2LS | Trans MOSFET N-CH 25V 39A 8-Pin TDSON EP | ||
| BSC050NE2LSG | New and Original | ||
| BSC050N03LSGATMA1-CUT TAPE | New and Original |