BSC050NE2LSATMA1

BSC050NE2LSATMA1
Mfr. #:
BSC050NE2LSATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 25V 58A TDSON-8 OptiMOS
Lifecycle:
New from this manufacturer.
Datasheet:
BSC050NE2LSATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
25 V
Id - Continuous Drain Current:
58 A
Rds On - Drain-Source Resistance:
4.2 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
14 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
28 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
38 S
Fall Time:
2 ns
Product Type:
MOSFET
Rise Time:
2.2 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
11.4 ns
Typical Turn-On Delay Time:
2.5 ns
Part # Aliases:
BSC050NE2LS BSC5NE2LSXT SP000756340
Unit Weight:
0.010582 oz
Tags
BSC050NE, BSC050N, BSC050, BSC05, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 25 V 7.1 mOhm 7 nC OptiMOS™ Power Mosfet - TDSON-8
***ineon SCT
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, PG-TDSON-8, RoHS
***nell
MOSFET, N CH, 25V, 58A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0042ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 28W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control
Part # Mfg. Description Stock Price
BSC050NE2LSATMA1
DISTI # V72:2272_06384786
Infineon Technologies AGTrans MOSFET N-CH 25V 39A 8-Pin TDSON EP T/R
RoHS: Compliant
81
  • 3000:$0.2502
  • 1000:$0.3404
  • 500:$0.4110
  • 250:$0.4155
  • 100:$0.4201
  • 25:$0.5900
  • 10:$0.5975
  • 1:$0.6909
BSC050NE2LSATMA1
DISTI # BSC050NE2LSATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 25V 39A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
69500In Stock
  • 1000:$0.4164
  • 500:$0.5274
  • 100:$0.6801
  • 10:$0.8610
  • 1:$0.9700
BSC050NE2LSATMA1
DISTI # BSC050NE2LSATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 25V 39A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
69500In Stock
  • 1000:$0.4164
  • 500:$0.5274
  • 100:$0.6801
  • 10:$0.8610
  • 1:$0.9700
BSC050NE2LSATMA1
DISTI # BSC050NE2LSATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 25V 39A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
65000In Stock
  • 5000:$0.3638
BSC050NE2LSATMA1
DISTI # 30535195
Infineon Technologies AGTrans MOSFET N-CH 25V 39A 8-Pin TDSON EP T/R
RoHS: Compliant
81
  • 3000:$0.2502
  • 1000:$0.3403
  • 500:$0.4109
  • 250:$0.4155
  • 100:$0.4201
  • 25:$0.5900
  • 23:$0.5975
BSC050NE2LSATMA1
DISTI # BSC050NE2LSATMA1
Infineon Technologies AGTrans MOSFET N-CH 25V 39A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC050NE2LSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.3239
  • 10000:$0.3229
  • 20000:$0.3219
  • 30000:$0.3209
  • 50000:$0.3209
BSC050NE2LSATMA1
DISTI # 47Y7994
Infineon Technologies AGMOSFET Transistor, N Channel, 58 A, 25 V, 0.0042 ohm, 10 V, 2 V RoHS Compliant: Yes0
  • 1:$0.9200
  • 10:$0.7600
  • 25:$0.6700
  • 50:$0.5800
  • 100:$0.4900
  • 250:$0.4570
  • 500:$0.4250
  • 1000:$0.3920
BSC050NE2LSATMA1.
DISTI # 23AC2919
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:58A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:28W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.3210
  • 10000:$0.3090
  • 20000:$0.3030
  • 30000:$0.2980
  • 50000:$0.2970
BSC050NE2LS
DISTI # 726-BSC050NE2LS
Infineon Technologies AGMOSFET N-Ch 25V 58A TDSON-8 OptiMOS
RoHS: Compliant
29083
  • 1:$0.9200
  • 10:$0.7600
  • 100:$0.4900
  • 1000:$0.3920
BSC050NE2LSATMA1
DISTI # 726-BSC050NE2LSATMA1
Infineon Technologies AGMOSFET N-Ch 25V 58A TDSON-8 OptiMOS
RoHS: Compliant
4711
  • 1:$0.9200
  • 10:$0.7600
  • 100:$0.4900
  • 1000:$0.3920
BSC050NE2LSATMA1
DISTI # 8275340P
Infineon Technologies AGMOSFET N-CH 39A 25V OPTIMOS TDSON8EP, RL2425
  • 125:£0.1420
BSC050NE2LSATMA1
DISTI # 2443420
Infineon Technologies AGMOSFET, N CH, 25V, 58A, TDSON-8
RoHS: Compliant
0
  • 5:£0.7430
  • 25:£0.4280
  • 100:£0.4200
  • 250:£0.4110
  • 500:£0.3950
BSC050NE2LSATMA1
DISTI # 2443420
Infineon Technologies AGMOSFET, N CH, 25V, 58A, TDSON-8
RoHS: Compliant
0
  • 1:$1.4600
  • 10:$1.2100
  • 100:$0.7750
  • 1000:$0.6210
  • 5000:$0.5240
BSC050NE2LSATMA1
DISTI # C1S322000232635
Infineon Technologies AGTrans MOSFET N-CH 25V 39A 8-Pin TDSON EP T/R
RoHS: Compliant
3381
  • 250:$0.4155
  • 100:$0.4201
  • 25:$0.5900
  • 10:$0.5975
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Availability
Stock:
Available
On Order:
1987
Enter Quantity:
Current price of BSC050NE2LSATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.87
$0.87
10
$0.73
$7.28
100
$0.47
$47.00
1000
$0.38
$376.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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