PartNumber | BSC050NE2LS | BSC050NE2LSATMA1 | BSC050NE2LSG |
Description | MOSFET N-Ch 25V 58A TDSON-8 OptiMOS | MOSFET N-Ch 25V 58A TDSON-8 OptiMOS | |
Manufacturer | Infineon | Infineon | infineon |
Product Category | MOSFET | MOSFET | IC Chips |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TDSON-8 | TDSON-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 25 V | 25 V | - |
Id Continuous Drain Current | 58 A | 58 A | - |
Rds On Drain Source Resistance | 5 mOhms | 4.2 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 10.4 nC | 14 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 28 W | 28 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 1.27 mm | 1.27 mm | - |
Length | 5.9 mm | 5.9 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 5.15 mm | 5.15 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 38 S | 38 S | - |
Fall Time | 2 ns | 2 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 2.2 ns | 2.2 ns | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 11.4 ns | 11.4 ns | - |
Typical Turn On Delay Time | 2.5 ns | 2.5 ns | - |
Part # Aliases | BSC050NE2LSATMA1 BSC5NE2LSXT SP000756340 | BSC050NE2LS BSC5NE2LSXT SP000756340 | - |
Unit Weight | 0.006702 oz | 0.010582 oz | - |