BSC050NE

BSC050NE2LS vs BSC050NE2LSATMA1 vs BSC050NE2LSG

 
PartNumberBSC050NE2LSBSC050NE2LSATMA1BSC050NE2LSG
DescriptionMOSFET N-Ch 25V 58A TDSON-8 OptiMOSMOSFET N-Ch 25V 58A TDSON-8 OptiMOS
ManufacturerInfineonInfineoninfineon
Product CategoryMOSFETMOSFETIC Chips
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage25 V25 V-
Id Continuous Drain Current58 A58 A-
Rds On Drain Source Resistance5 mOhms4.2 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge10.4 nC14 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation28 W28 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min38 S38 S-
Fall Time2 ns2 ns-
Product TypeMOSFETMOSFET-
Rise Time2.2 ns2.2 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time11.4 ns11.4 ns-
Typical Turn On Delay Time2.5 ns2.5 ns-
Part # AliasesBSC050NE2LSATMA1 BSC5NE2LSXT SP000756340BSC050NE2LS BSC5NE2LSXT SP000756340-
Unit Weight0.006702 oz0.010582 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC050NE2LS MOSFET N-Ch 25V 58A TDSON-8 OptiMOS
BSC050NE2LSATMA1 MOSFET N-Ch 25V 58A TDSON-8 OptiMOS
BSC050NE2LSATMA1 MOSFET N-CH 25V 39A TDSON-8
BSC050NE2LS Trans MOSFET N-CH 25V 39A 8-Pin TDSON EP
BSC050NE2LSG New and Original
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