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IKZ50N65ES5XKSA1

IKZ50N65ES5XKSA1
Mfr. #:
IKZ50N65ES5XKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-2
Lifecycle:
New from this manufacturer.
Datasheet:
IKZ50N65ES5XKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IKZ50N65ES5XKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-4
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.35 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
80 A
Pd - Power Dissipation:
274 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 175 C
Series:
TRENCHSTOP 5 S5
Packaging:
Tube
Continuous Collector Current Ic Max:
80 A
Brand:
Infineon Technologies
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
240
Subcategory:
IGBTs
Tradename:
TRENCHSTOP
Part # Aliases:
IKZ50N65ES5 SP001636074
Unit Weight:
0.211644 oz
Tags
IKZ50N65E, IKZ5, IKZ
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IKZ50N65ES5XKSA1 P-Channel IGBT, 80 A 650 V, 4-Pin TO-247
***i-Key
IGBT TRENCH 650V 80A TO247-4
***ronik
IGBT 650V 50A 1,35V TO247-4
***et Europe
IGBT PRODUCTS
***ark
Transistor, Igbt, N-Ch, 650V, 80A, To247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:274W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. TRANSISTOR, IGBT, N-CH, 650V, 80A, TO247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.35V; Power Dissipation Pd:274W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
TRANSISTOR, IGBT, CA-N, 650V, 80A, TO247; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.35V; Dissipazione di Potenza Pd:274W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:4Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Very low control inductance loop; Extra emitter pin, the forth package pin, for driver feedback; Same creepage distance of collector emitter as standard TO-247 package | Benefits: Over 20% total switching loses reduction compared to standard TO-247-3; System efficiency improvement or power density increase compared to standard TO-247-3 | Target Applications: Industrial UPS; Industrial SMPS; Energy Storage; Charger; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs
Infineon TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs are the link between the L5 and H5 and address applications switching between 10kHz and 40kHz. The IGBTs deliver high efficiency, faster time to market cycles, circuit design complexity reduction and PCB bill of material cost optimization. The S5 are packed with features to help designers achieve goals without the need to increase circuit complexity.
Part # Mfg. Description Stock Price
IKZ50N65ES5XKSA1
DISTI # IKZ50N65ES5XKSA1-ND		Infineon Technologies AGIGBT TRENCH 650V 80A TO247-4
RoHS: Compliant
Min Qty: 1
Container: Tube		234In Stock
  • 2640:$3.2780
  • 720:$4.0811
  • 240:$4.7940
  • 25:$5.5316
  • 10:$5.8510
  • 1:$6.5100
IKZ50N65ES5XKSA1
DISTI # SP001636074		Infineon Technologies AGIGBT PRODUCTS (Alt: SP001636074)
RoHS: Compliant
Min Qty: 1		Europe - 240
  • 1000:€2.4900
  • 100:€2.5900
  • 500:€2.5900
  • 50:€2.6900
  • 25:€2.7900
  • 10:€3.0900
  • 1:€3.8900
IKZ50N65ES5XKSA1
DISTI # IKZ50N65ES5XKSA1		Infineon Technologies AGIGBT PRODUCTS - Rail/Tube (Alt: IKZ50N65ES5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$2.8900
  • 1440:$2.9900
  • 960:$3.0900
  • 480:$3.1900
  • 240:$3.2900
IKZ50N65ES5XKSA1
DISTI # 24AC9032		Infineon Technologies AGTRANSISTOR, IGBT, N-CH, 650V, 80A, TO247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.35V,Power Dissipation Pd:274W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of RoHS Compliant: Yes34
  • 500:$3.9000
  • 250:$4.1500
  • 100:$4.6100
  • 50:$4.8400
  • 25:$5.0800
  • 10:$5.3100
  • 1:$6.2500
IKZ50N65ES5XKSA1
DISTI # 726-IKZ50N65ES5XKSA1		Infineon Technologies AGIGBT Transistors To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control l
RoHS: Compliant		160
  • 1:$6.1900
  • 10:$5.2600
  • 100:$4.5600
  • 250:$4.3300
  • 500:$3.8800
IKZ50N65ES5XKSA1
DISTI # 1623289		Infineon Technologies AGIGBT 650V 60A TRENCHSTOP5 DIODE TO-247, TU228
  • 90:£2.1830
  • 30:£2.3170
IKZ50N65ES5XKSA1
DISTI # XSKDRABV0021137		Infineon Technologies AG 
RoHS: Compliant		720 in Stock0 on Order
  • 720:$3.8500
  • 240:$4.1300
IKZ50N65ES5XKSA1
DISTI # 2771418		Infineon Technologies AGTRANSISTOR, IGBT, N-CH, 650V, 80A, TO247
RoHS: Compliant		34
  • 1200:$5.2600
  • 720:$6.2400
  • 240:$7.3300
  • 10:$8.9400
  • 1:$9.9400
IKZ50N65ES5XKSA1
DISTI # 2771418		Infineon Technologies AGTRANSISTOR, IGBT, N-CH, 650V, 80A, TO24739
  • 500:£2.8100
  • 250:£3.1400
  • 100:£3.3100
  • 10:£3.8100
  • 1:£4.4900
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Availability
Stock:
160
On Order:
2143
Enter Quantity:
Current price of IKZ50N65ES5XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$6.19
$6.19
10
$5.26
$52.60
100
$4.56
$456.00
250
$4.33
$1 082.50
500
$3.88
$1 940.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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