STU3N62K3

Mfr. #:: STU3N62K3
Manufacturer:: STMicroelectronics
Description:: MOSFET N-Ch, 620V-2.2ohms 2.7A
Lifecycle:: New from this manufacturer.
Datasheet:: STU3N62K3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: STU3N62K3 more Information STU3N62K3 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-251-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 620 V

Id - Continuous Drain Current:: 2.7 A

Rds On - Drain-Source Resistance:: 2.5 Ohms

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 13 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 45 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: MDmesh

Packaging:: Tube

Height:: 6.2 mm

Length:: 6.6 mm

Series:: STU3N62K3

Transistor Type:: 1 N-Channel

Width:: 2.4 mm

Brand:: STMicroelectronics

Fall Time:: 15.6 ns

Product Type:: MOSFET

Rise Time:: 6.8 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 22 ns

Typical Turn-On Delay Time:: 9 ns

Unit Weight:: 0.139332 oz

Tags: STU3N, STU3, STU

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Vacuum Packaging with PL

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STU3N62K3 Description

***icroelectronics: N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in IPAK package

*** Source Electronics: Trans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 620V 2.7A IPAK

***r Electronics: Power Field-Effect Transistor, 2.7A I(D), 620V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ark: MOSFET, N CH, 620V, 2.7A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:2.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

***icroelectronics: N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in IPAK package

***ure Electronics: N-Channel 620 V 2 Ohm Through Hole SuperMESH3 Power Mosfet - IPAK

***ark: Power Mosfet, N Channel, 3.8 A, 620 V, 1.7 Ohm, 10 V, 3.75 V Rohs Compliant: Yes

***ment14 APAC: MOSFET, N CH, 620V, 3.8A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Source Voltage Vds:620V; On Resistance

***r Electronics: Power Field-Effect Transistor, 3.8A I(D), 620V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***nell: MOSFET, N CH, 620V, 3.8A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.8A; Drain Source Voltage Vds: 620V; On Resistance Rds(on): 1.7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 70W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***icroelectronics: N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK package

*** Electronics: MOSFET Transistor, N Channel, 5 A, 600 V, 0.84 ohm, 10 V, 3 V RoHS Compliant: Yes

*** Source Electronics: MOSFET N-CH 600V 5A IPAK / Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) IPAK Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***ark: MOSFET, N CH, 600V, 5A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes

***inecomponents.com: 60V P-Channel A-FET / Substitute of IRFU9024

***i-Key: P-CHANNEL POWER MOSFET

***ser: MOSFETs PCh/60V/7.8a/0.28Ohm

***emi: N-Channel Power MOSFET, SuperFET® II, FAST, 600V, 4.5A, 900mΩ, IPAK

***ure Electronics: Single N-Channel 600 V 0.90 Ohm 17 nC 52 W Silicon Through Hole Mosfet - TO-251

***el Electronic: FAIRCHILD SEMICONDUCTOR FCU900N60ZPower MOSFET, N Channel, 4.5 A, 600 V, 0.82 ohm, 10 V, 2.5 V

*** Stop Electro: Power Field-Effect Transistor, 4.5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ment14 APAC: MOSFET, N-CH, 600V, 4.5A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.82ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***ark: MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Dr

***et: Trans MOSFET N-CH 30V 35A 3-Pin(3+Tab) TO-251

***ronik: N-CH 30V 35A 11mOhm TO251-3 RoHSconf

***nell: MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0088ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 38W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 35A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V

***et: Transistor MOSFET N-CH 600V 1.8A 3-Pin TO-251 T/R

***ment14 APAC: MOSFET, N, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-251; No. of Pins:3; Current Id Max:1.8A; Package / Case:TO-251; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ineon: Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

STU3N62K3 More Information

Zener-Protected SuperMESH3 Power MOSFETs: STMicroelectronics new SuperMESH3™ Power MOSFETs are obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH™ layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly down, special attention has been taken to ensure that these MOSFETs have a very good dynamic performance coupled with a very large avalanche capability for the most demanding switching applications. SuperMESH3™ Power MOSFETs now come in voltages up to 1200V.

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Market price

Part #	Mfg.	Description	Stock	Price
STU3N62K3 DISTI # 31976754	STMicroelectronics	Trans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	4873	48:$0.2125
STU3N62K3 DISTI # 497-12695-5-ND	STMicroelectronics	MOSFET N-CH 620V 2.7A IPAK RoHS: Compliant Min Qty: 1 Container: Tube	3000In Stock	5025:$0.4818 2550:$0.5071 525:$0.6883 150:$0.8332 75:$1.0143 10:$1.0690 1:$1.2000
STU3N62K3 DISTI # STU3N62K3	STMicroelectronics	Trans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: STU3N62K3) RoHS: Compliant Min Qty: 3000 Container: Tube	Americas - 0	30000:$0.4399 18000:$0.4489 12000:$0.4699 6000:$0.4919 3000:$0.5169
STU3N62K3 DISTI # STU3N62K3	STMicroelectronics	Trans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube (Alt: STU3N62K3) RoHS: Compliant Min Qty: 75 Container: Tube	Europe - 0	750:€0.1999 450:€0.2159 300:€0.2339 150:€0.2549 75:€0.3119
STU3N62K3 DISTI # 57P2562	STMicroelectronics	MOSFET, N CH, 620V, 2.7A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:2.7A,Drain Source Voltage Vds:620V,On Resistance Rds(on):2.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.75V,MSL:- RoHS Compliant: Yes	0	10000:$0.4490 2500:$0.4630 1000:$0.5730 500:$0.6560 100:$0.7420 10:$0.9660 1:$1.1300
STU3N62K3 DISTI # 511-STU3N62K3	STMicroelectronics	MOSFET N-Ch, 620V-2.2ohms 2.7A RoHS: Compliant	5980	1:$1.1400 10:$0.9660 100:$0.7420 500:$0.6560 1000:$0.5180 3000:$0.4590 9000:$0.4420
STU3N62K3	STMicroelectronics		125
STU3N62K3 DISTI # STU3N62K3	STMicroelectronics	Transistor: N-MOSFET,unipolar,620V,1.7A,45W,IPAK	152	300:$0.2800 75:$0.3000 25:$0.3400 5:$0.4200 1:$0.6500
STU3N62K3 DISTI # 2098356	STMicroelectronics	MOSFET, N CH, 620V, 2.7A, IPAK RoHS: Compliant	74	24000:$0.6450 9000:$0.6660 3000:$0.6920 1000:$0.7810 500:$0.9890 100:$1.1200 10:$1.4600 1:$1.7200
STU3N62K3	STMicroelectronics	N-channel 620V, 2.2, 2.7A Power MOSFET	2050	1:$0.2900 100:$0.2700 500:$0.2500 1000:$0.2300
STU3N62K3 DISTI # 2098356	STMicroelectronics	MOSFET, N CH, 620V, 2.7A, IPAK	74	500:£0.4510 250:£0.4810 100:£0.5090 25:£0.6630 5:£0.7380

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STU3N62K3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes