FQI4N90TU

Mfr. #:: FQI4N90TU
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET 900V N-Channel QFET
Lifecycle:: New from this manufacturer.
Datasheet:: FQI4N90TU Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-262-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 900 V

Id - Continuous Drain Current:: 4.2 A

Rds On - Drain-Source Resistance:: 3.3 Ohms

Vgs - Gate-Source Voltage:: 30 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 3.13 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 7.88 mm

Length:: 10.29 mm

Series:: FQI4N90

Transistor Type:: 1 N-Channel

Type:: MOSFET

Width:: 4.83 mm

Brand:: ON Semiconductor / Fairchild

Forward Transconductance - Min:: 3.5 S

Fall Time:: 40 ns

Product Type:: MOSFET

Rise Time:: 70 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 45 ns

Typical Turn-On Delay Time:: 25 ns

Part # Aliases:: FQI4N90TU_NL

Unit Weight:: 0.073511 oz

Tags: FQI4N, FQI4, FQI

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQI4N90TU Description

***ark: Transistor,mosfet,n-Channel,900V V(Br)Dss,4.2A I(D),to-262Aa Rohs Compliant: Yes

***emi: N-Channel Power MOSFET, QFET®, 900 V, 4.2 A, 3.3 Ω, I2PAK

***r Electronics: Power Field-Effect Transistor, 4.2A I(D), 900V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***el Electronic: Trans MOSFET N-CH 800V 4.8A 3-Pin(3+Tab) I2PAK Rail

***i-Key: MOSFET N-CH 800V 4.8A I2PAK

*** Electronics: N-CHANNEL POWER MOSFET

***ser: MOSFETs 800V N-Channel QFET

***emi: N-Channel Power MOSFET, QFET®, 800 V, 3.9 A, 3.6 Ω, I2PAK

***r Electronics: Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

***nell: MOSFET, N, TO-262; Transistor type:Enhancement; Voltage, Vds typ:800V; Current, Id cont:3.9A; Resistance, Rds on:3.6ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-262; Current, Idm pulse:15.6A; Pins, No. of:3; Power dissipation:3.13W; Termination Type:Through Hole; Transistor polarity:N; Voltage, Vds max:800V; Voltage, Vgs th max:5V

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***i-Key: MOSFET N-CH 800V 3A I2PAK

*** Services: CoC and 2-years warranty / RFQ for pricing

***el Electronic: IC SUPERVISOR 1 CHANNEL 3SSOP

***i-Key Marketplace: N-CHANNEL POWER MOSFET

***ser: MOSFETs 800V N-Channel QFET

***icroelectronics: N-channel 800 V, 1.5 Ohm typ., 5.2 A Zener-protected SuperMESH Power MOSFET in an I2PAK package

***et: Trans MOSFET N-CH 800V 5.2A 3-Pin(3+Tab) I2PAK Tube

***ponent Stockers USA: 5.2 A 800 V 1.8 ohm N-CHANNEL Si POWER MOSFET TO-262AA

*** Electronic Components: MOSFET N-Ch, 800V-1.5ohms Zener SuperMESH 5.2A

***r Electronics: Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

***icroelectronics SCT: Power MOSFETs, 800V, 5.2A, I2PAK, Tube

***icroelectronics: N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in I2PAKFP package

***r Electronics: Power Field-Effect Transistor, 4.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 800V 4.5A 3-Pin(3+Tab) I2PAKFP Tube

***el Electronic: IC MODULATR D-S CUR-SHNT 16-QFN

***ure Electronics: Single N-Channel 800 V 3 Ohms Surface Mount Power Mosfet - TO-262

***ical: Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-262

***id Electronics: VISHAY SEMICONDUCTOR IRFBE30LPBF

Market price

Part #	Mfg.	Description	Stock	Price
FQI4N90TU DISTI # FQI4N90TU-ND	ON Semiconductor	MOSFET N-CH 900V 4.2A I2PAK RoHS: Compliant Min Qty: 1000 Container: Tube	Temporarily Out of Stock	1000:$1.2447
FQI4N90TU DISTI # FQI4N90TU	ON Semiconductor	Trans MOSFET N-CH 900V 4.2A 3-Pin(3+Tab) I2PAK Rail (Alt: FQI4N90TU) RoHS: Compliant Min Qty: 1	Europe - 0	1:€1.2029 10:€1.0939 25:€1.0029 50:€0.9629 100:€0.9259 500:€0.8909 1000:€0.8589
FQI4N90TU DISTI # FQI4N90TU	ON Semiconductor	Trans MOSFET N-CH 900V 4.2A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: FQI4N90TU) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.8869 2000:$0.8809 4000:$0.8699 6000:$0.8579 10000:$0.8369
FQI4N90TU DISTI # 82C4156	ON Semiconductor	TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,4.2A I(D),TO-262AA ROHS COMPLIANT: YES	0	5000:$1.0200 2500:$1.0500 1000:$1.3000 500:$1.4500 100:$1.5600 10:$1.9500 1:$2.2900
FQI4N90TU	ON Semiconductor	RoHS: Not Compliant	9000	1000:$1.6200 500:$1.7000 100:$1.7700 25:$1.8500 1:$1.9900
FQI4N90TU	Fairchild Semiconductor Corporation	RoHS: Not Compliant	842	1000:$1.6200 500:$1.7000 100:$1.7700 25:$1.8500 1:$1.9900
FQI4N90TU DISTI # 512-FQI4N90TU	ON Semiconductor	MOSFET 900V N-Channel QFET RoHS: Compliant	287	1:$2.5000 10:$2.1300 100:$1.7000 500:$1.4900 1000:$1.2400 2500:$1.1500 5000:$1.1100

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Availability

Stock:: 287
On Order:: 2270
Enter Quantity:

Current price of FQI4N90TU is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.98~~; ~~$1.98~~

10: ~~$1.68~~; ~~$16.80~~

100: ~~$1.35~~; ~~$135.00~~

500: ~~$1.18~~; ~~$590.00~~

1000: ~~$0.98~~; ~~$978.00~~

2000: ~~$0.91~~; ~~$1 822.00~~

5000: ~~$0.88~~; ~~$4 385.00~~

10000: ~~$0.84~~; ~~$8 440.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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FQI4N90TU

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes