 | | | |
| PartNumber | FQI4N80TU | FQI4N25TU | FQI4N20TU |
| Description | MOSFET 800V N-Channel QFET | MOSFET | MOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 | TO-262-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 250 V | 200 V |
| Id Continuous Drain Current | 3.9 A | 3.6 A | 3.6 A |
| Rds On Drain Source Resistance | 2.8 Ohms | 1.75 Ohms | 1.4 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 3.13 W | 3.13 W | 3.13 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Height | 7.88 mm | 7.88 mm | 7.88 mm |
| Length | 10.29 mm | 10.29 mm | 10.29 mm |
| Series | FQI4N80 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET | - |
| Width | 4.83 mm | 4.83 mm | 4.83 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 3.8 S | - | - |
| Fall Time | 35 ns | 22 ns | 25 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 45 ns | 45 ns | 50 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 35 ns | 6.4 ns | 7 ns |
| Typical Turn On Delay Time | 16 ns | 6.8 ns | 7 ns |
| Unit Weight | 0.073511 oz | 0.084199 oz | 0.084199 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQI4N90TU | MOSFET 900V N-Channel QFET | |
| FQI4N80TU | MOSFET 800V N-Channel QFET | ||
| FQI4N25TU | MOSFET | ||
| FQI4N20TU | MOSFET | ||
| FQI4N20 | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| FQI4N20L | New and Original | ||
| FQI4N20TM | New and Original | ||
| FQI4N20TUFSC | New and Original | ||
| FQI4N25 | New and Original | ||
| FQI4N25TUFSC | New and Original | ||
| FQI4N80 | New and Original | ||
| FQI4N80C | New and Original | ||
| FQI4N80TUFSC | New and Original | ||
| FQI4N90 | New and Original | ||
ON Semiconductor |
FQI4N20LTU | MOSFET N-CH 200V 3.8A I2PAK | |
| FQI4N20TU | MOSFET N-CH 200V 3.6A I2PAK | ||
| FQI4N25TU | MOSFET N-CH 250V 3.6A I2PAK | ||
| FQI4N80TU | Darlington Transistors MOSFET 800V N-Channel QFET | ||
| FQI4N90TU | IGBT Transistors MOSFET 900V N-Channel QFET |