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IPD60R360P7SAUMA1

IPD60R360P7SAUMA1
Mfr. #:
IPD60R360P7SAUMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET CONSUMER
Lifecycle:
New from this manufacturer.
Datasheet:
IPD60R360P7SAUMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPD60R360P7SAUMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
9 A
Rds On - Drain-Source Resistance:
300 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
13 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
41 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Series:
CoolMOS P7
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Fall Time:
10 ns
Moisture Sensitive:
Yes
Product Type:
MOSFET
Rise Time:
7 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
42 ns
Typical Turn-On Delay Time:
8 ns
Part # Aliases:
IPD60R360P7S SP001658166
Unit Weight:
0.011993 oz
Tags
IPD60R360P7S, IPD60R360P7, IPD60R360P, IPD60R36, IPD60R3, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650V 360 mOhm 13 nC CoolMOS™ Power Mosfet - DPAK
***ark
Mosfet, N-Ch, 600V, 9A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.3Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Rohs Compliant: Yes |Infineon IPD60R360P7SAUMA1
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 360 / Gate-Source Voltage V = 20 / Fall Time ns = 10 / Rise Time ns = 7 / Turn-OFF Delay Time ns = 42 / Turn-ON Delay Time ns = 8 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-3 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 41
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Part # Mfg. Description Stock Price
IPD60R360P7SAUMA1
DISTI # V36:1790_18205321		Infineon Technologies AGTrans MOSFET N-CH 600V 9A T/R0
    IPD60R360P7SAUMA1
    DISTI # IPD60R360P7SAUMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 600V 9A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		On Order
    • 5000:$0.3989
    • 2500:$0.4188
    IPD60R360P7SAUMA1
    DISTI # IPD60R360P7SAUMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 600V 9A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$0.4622
    • 500:$0.5854
    • 100:$0.7087
    • 10:$0.9090
    • 1:$1.0200
    IPD60R360P7SAUMA1
    DISTI # IPD60R360P7SAUMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 600V 9A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$0.4622
    • 500:$0.5854
    • 100:$0.7087
    • 10:$0.9090
    • 1:$1.0200
    IPD60R360P7SAUMA1
    DISTI # 33693993    		Infineon Technologies AGTrans MOSFET N-CH 600V 9A T/R2500
    • 2500:$0.3601
    IPD60R360P7SAUMA1
    DISTI # IPD60R360P7SAUMA1    		Infineon Technologies AGCONSUMER - Tape and Reel (Alt: IPD60R360P7SAUMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.3619
    • 15000:$0.3679
    • 10000:$0.3809
    • 5000:$0.3949
    • 2500:$0.4099
    IPD60R360P7SAUMA1
    DISTI # 57AC6813    		Infineon Technologies AGMOSFET, N-CH, 600V, 9A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power Dissipation RoHS Compliant: Yes2500
    • 1000:$0.4320
    • 500:$0.5470
    • 250:$0.5830
    • 100:$0.6190
    • 50:$0.6810
    • 25:$0.7440
    • 10:$0.8060
    • 1:$0.9390
    IPD60R360P7SAUMA1
    DISTI # 726-IPD60R360P7SAUMA    		Infineon Technologies AGMOSFET CONSUMER
    RoHS: Compliant    		0
    • 1:$0.9300
    • 10:$0.7980
    • 100:$0.6130
    • 500:$0.5420
    • 1000:$0.4280
    IPD60R360P7SAUMA1
    DISTI # 2862306    		Infineon Technologies AGMOSFET, N-CH, 600V, 9A, TO-252
    RoHS: Compliant    		2495
    • 100:$1.2200
    • 10:$1.5300
    • 1:$1.7300
    IPD60R360P7SAUMA1
    DISTI # 2862306    		Infineon Technologies AGMOSFET, N-CH, 600V, 9A, TO-2522566
    • 100:£0.5950
    • 10:£0.8450
    • 1:£1.0300
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    Mfr.#: UCC28780RTER

    OMO.#: OMO-UCC28780RTER

    		 Switching Controllers ACTIVE CLAMP FLYBACK
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    Mfr.#: UCC24612-1DBVT

    OMO.#: OMO-UCC24612-1DBVT

    		 Switching Controllers SYNC RECTIFIER FLYBACK
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    Mfr.#: 632723300011

    OMO.#: OMO-632723300011-WURTH-ELECTRONICS

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    		 Cap Ceramic 1uF 25V X7R 10% Pad SMD 0603 125C T/R
    Availability
    Stock:
    Available
    On Order:
    1992
    Enter Quantity:
    Current price of IPD60R360P7SAUMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.93
    $0.93
    10
    $0.80
    $7.98
    100
    $0.61
    $61.30
    500
    $0.54
    $271.00
    1000
    $0.43
    $428.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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