IHW15N120E1XKSA1

Mfr. #:: IHW15N120E1XKSA1
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors IGBT PRODUCTS
Lifecycle:: New from this manufacturer.
Datasheet:: IHW15N120E1XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 1.2 kV

Collector-Emitter Saturation Voltage:: 1.5 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 30 A

Pd - Power Dissipation:: 156 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Packaging:: Tube

Continuous Collector Current Ic Max:: 30 A

Brand:: Infineon Technologies

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 240

Subcategory:: IGBTs

Part # Aliases:: IHW15N120E1 SP001391908

Unit Weight:: 0.211644 oz

Tags: IHW15N, IHW1, IHW

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IHW15N120E1XKSA1 Description

***ical: Trans IGBT Chip N-CH 1200V 30A 156000mW 3-Pin(3+Tab) TO-247 Tube

***ark: Igbt, Single, 1.2Kv, 30A, To-247; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):1.5V; Power Dissipation Pd:156W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon: The new RC-E IGBTs are cost- and feature-optimized specifically for low- to mid-range induction cookers and other resonant applications. The RC-E technology uses an IGBT with monolithically integrated reverse conduction diode to set the new benchmark for price/performance and ease-of-use in the industry. This new family offers Infineons proven quality in RC IGBTs and meets all the needs of so switching applications, including attractive pricing compared to other general purpose IGBTs. | Summary of Features: Low E off and V ce(sat); Designed for so switching applications; Optimized for performance with switching frequencies from 18kHz40kHz; Most commonly used blocking voltage, 1200V | Benefits: Price versus performance leader for cost-e ective designs; Low losses help designs meet energy efficiency standards; Drop-in replacement for existing designs; Soft switching for good EMI behavior | Target Applications: Low- to mid-range induction cookers

Market price

Part #	Mfg.	Description	Stock	Price
IHW15N120E1XKSA1 DISTI # V99:2348_16563130	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube	454	1000:$1.3160 500:$1.5960 100:$1.8160 10:$2.3060 1:$2.9788
IHW15N120E1XKSA1 DISTI # V36:1790_16563130	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube	0	240000:$1.0840 120000:$1.0880 24000:$1.5070 2400:$2.3120 240:$2.4500
IHW15N120E1XKSA1 DISTI # IHW15N120E1XKSA1-ND	Infineon Technologies AG	IGBT NPT/TRENCH 1200V 30A TO247 RoHS: Compliant Min Qty: 1 Container: Tube	340In Stock	5040:$1.3031 2640:$1.3194 720:$1.7104 240:$2.0817 25:$2.4432 10:$2.5900 1:$2.8800
IHW15N120E1XKSA1 DISTI # 32875280	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube	454	5:$2.9788
IHW15N120E1XKSA1 DISTI # IHW15N120E1XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 1200V 30A 3 TO-247 Tube - Rail/Tube (Alt: IHW15N120E1XKSA1) RoHS: Compliant Min Qty: 480 Container: Tube	Americas - 0	4800:$1.0900 960:$1.1900 1440:$1.1900 2400:$1.1900 480:$1.2900
IHW15N120E1XKSA1 DISTI # SP001391908	Infineon Technologies AG	Trans IGBT Chip N-CH 1200V 30A 3 TO-247 Tube (Alt: SP001391908) RoHS: Compliant Min Qty: 30 Container: Tube	Europe - 0	300:€0.9729 180:€1.0429 120:€1.1229 60:€1.2169 30:€1.4599
IHW15N120E1XKSA1 DISTI # 34AC1617	Infineon Technologies AG	IGBT, SINGLE, 1.2KV, 30A, TO-247,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:156W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes	129	1000:$1.3600 500:$1.6400 100:$1.8800 10:$2.3400 1:$2.7600
IHW15N120E1XKSA1 DISTI # 726-IHW15N120E1XKSA1	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS RoHS: Compliant	537	1:$2.7300 10:$2.3200 100:$1.8600 500:$1.6200 1000:$1.3500
IHW15N120E1XKSA1 DISTI # 2781023	Infineon Technologies AG	IGBT, SINGLE, 1.2KV, 30A, TO-247 RoHS: Compliant	132	1000:$1.9700 500:$2.0700 250:$2.1800 100:$2.3000 10:$2.6100 1:$2.7900
IHW15N120E1XKSA1 DISTI # 2781023	Infineon Technologies AG	IGBT, SINGLE, 1.2KV, 30A, TO-247	118	500:£1.2500 250:£1.3500 100:£1.4500 10:£1.8100 1:£2.4000

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Availability

Stock:: 537
On Order:: 2520
Enter Quantity:

Current price of IHW15N120E1XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$2.73~~; ~~$2.73~~

10: ~~$2.32~~; ~~$23.20~~

100: ~~$1.86~~; ~~$186.00~~

500: ~~$1.62~~; ~~$810.00~~

1000: ~~$1.35~~; ~~$1 350.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IHW15N120E1XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes