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SQD30N05-20L_T4GE3

SQD30N05-20L_T4GE3
Mfr. #:
SQD30N05-20L_T4GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 55V Vds 20V Vgs TO-252
Lifecycle:
New from this manufacturer.
Datasheet:
SQD30N05-20L_T4GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SQD30N05-20L_T4GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
55 V
Id - Continuous Drain Current:
30 A
Rds On - Drain-Source Resistance:
20 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
18 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
50 W
Configuration:
Single
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Tradename:
TrenchFET
Series:
SQ
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
34 S
Fall Time:
5 ns
Product Type:
MOSFET
Rise Time:
10 ns
Factory Pack Quantity:
1
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
18 ns
Typical Turn-On Delay Time:
7 ns
Tags
SQD30N, SQD30, SQD3, SQD
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Image Part # Description
SQD30N05-20L_GE3

Mfr.#: SQD30N05-20L_GE3

OMO.#: OMO-SQD30N05-20L-GE3

 MOSFET N-Channel 55V AEC-Q101 Qualified
SQD30N05-20L_T4GE3

Mfr.#: SQD30N05-20L_T4GE3

OMO.#: OMO-SQD30N05-20L-T4GE3

 MOSFET 55V Vds 20V Vgs TO-252
SQD30N05-20L-GE3

Mfr.#: SQD30N05-20L-GE3

OMO.#: OMO-SQD30N05-20L-GE3-317

 RF Bipolar Transistors MOSFET N-Channel 55V Automotive MOSFET
SQD30N05-20L_GE3

Mfr.#: SQD30N05-20L_GE3

OMO.#: OMO-SQD30N05-20L-GE3-VISHAY

 MOSFET N-CH 55V 30A TO252
SQD30N05-20L

Mfr.#: SQD30N05-20L

OMO.#: OMO-SQD30N05-20L-1190

 New and Original
Availability
Stock:
Available
On Order:
4000
Enter Quantity:
Current price of SQD30N05-20L_T4GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
2500
$0.42
$1 047.50
5000
$0.40
$1 990.00
10000
$0.38
$3 840.00
25000
$0.37
$9 275.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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