SCT2120AFC

SCT2120AFC
Mfr. #:
SCT2120AFC
Manufacturer:
Rohm Semiconductor
Description:
MOSFET MOSFET650V 29 -220A Silicon Carbide SiC
Lifecycle:
New from this manufacturer.
Datasheet:
SCT2120AFC Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SCT2120AFC more Information
Product Attribute
Attribute Value
Manufacturer:
ROHM Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
SiC
Mounting Style:
Through Hole
Package / Case:
TO-220AB-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
29 A
Rds On - Drain-Source Resistance:
120 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.6 V
Vgs - Gate-Source Voltage:
- 6 V, 22 V
Qg - Gate Charge:
61 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
165 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Series:
SCT2x
Transistor Type:
1 N-Channel Power MOSFET
Brand:
ROHM Semiconductor
Forward Transconductance - Min:
2.7 S
Fall Time:
19 ns
Product Type:
MOSFET
Rise Time:
31 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
60 ns
Typical Turn-On Delay Time:
22 ns
Part # Aliases:
SCT2120AF
Unit Weight:
0.211644 oz
Tags
SCT21, SCT2, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SCT2120AFC - 650 V 120 mO 61 nC N-Channel SIC Power MosFet - TO-220AB
***ical
Trans MOSFET N-CH SiC 650V 29A 3-Pin(3+Tab) TO-220AB Tube
***nell
MOSFET, N CHANNEL, 650V, 29A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.12ohm; Rds(on) Test Voltage Vgs: 18V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 165W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
Electronic Vehicle (EV) Solutions
ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.
Part # Mfg. Description Stock Price
SCT2120AFC
DISTI # 32649982
ROHM SemiconductorSCT2120AFC1543
  • 2:$16.1250
SCT2120AFC
DISTI # SCT2120AFC-ND
ROHM SemiconductorMOSFET N-CH 650V 29A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
763In Stock
  • 1000:$8.2194
  • 100:$10.0734
  • 25:$11.4332
  • 10:$11.9270
  • 1:$12.9800
SCT2120AFC
DISTI # C1S625901175866
ROHM SemiconductorMOSFETs1543
  • 1000:$6.0900
  • 500:$8.8700
  • 200:$9.2900
  • 100:$9.9600
  • 50:$11.3000
  • 10:$11.9000
  • 1:$12.9000
SCT2120AFC
DISTI # SCT2120AFC
ROHM SemiconductorTrans SiC MOSFET N-CH 650V 29A 3-Pin TO-220AB Tube - Rail/Tube (Alt: SCT2120AFC)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 10000:$7.9333
  • 6000:$8.1530
  • 4000:$8.6313
  • 2000:$9.1691
  • 1000:$9.7785
SCT2120AFC
DISTI # SCT2120AFC
ROHM SemiconductorTrans SiC MOSFET N-CH 650V 29A 3-Pin TO-220AB Tube (Alt: SCT2120AFC)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 250:€9.0500
  • 100:€9.0700
  • 50:€9.5700
  • 10:€10.0500
  • 5:€11.4000
  • 1:€12.0300
SCT2120AFC.
DISTI # 30AC0013
ROHM SemiconductorTransistor Polarity:N Channel,Continuous Drain Current Id:29A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:4V,Power Dissipation Pd:165W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 10000:$7.9400
  • 6000:$8.1600
  • 4000:$8.6400
  • 2000:$9.1700
  • 1:$9.7800
SCT2120AFC
DISTI # 755-SCT2120AFC
ROHM SemiconductorMOSFET MOSFET650V 29 -220A Silicon Carbide SiC
RoHS: Compliant
560
  • 1:$12.9700
  • 10:$11.9200
  • 25:$11.4300
  • 100:$10.0700
  • 250:$9.5700
  • 500:$8.9600
SCT2120AFCROHM Semiconductor 193
  • 158:$11.6160
  • 75:$12.7050
  • 1:$16.3350
SCT2120AFCROHM SemiconductorMOSFET MOSFET650V 29 -220A Silicon Carbide SiC
RoHS: Compliant
Americas - 1000
  • 50:$8.9000
  • 2000:$8.4100
  • 5000:$8.2300
  • 10000:$8.1000
SCT2120AFCROHM SemiconductorRoHS(ship within 1day)242
  • 1:$9.8300
  • 10:$8.0800
  • 50:$7.7500
  • 100:$7.5400
  • 500:$7.3700
  • 1000:$7.2600
SCT2120AFC
DISTI # 2469808
ROHM SemiconductorMOSFET, N CHANNEL, 650V, 29A, TO-220AB35
  • 100:£8.1900
  • 50:£8.4700
  • 10:£8.7300
  • 5:£10.1000
  • 1:£10.6100
SCT2120AFC
DISTI # 2469808
ROHM SemiconductorMOSFET, N CHANNEL, 650V, 29A, TO-220AB
RoHS: Compliant
35
  • 25:$17.2300
  • 10:$17.9600
  • 1:$19.5500
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OMO.#: OMO-FFSP1065A

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FFSP1665A

Mfr.#: FFSP1665A

OMO.#: OMO-FFSP1665A

Schottky Diodes & Rectifiers 650V 16A SIC SBD
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Mfr.#: FFSP0665A

OMO.#: OMO-FFSP0665A

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Mfr.#: FFSP0865A

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Availability
Stock:
517
On Order:
2500
Enter Quantity:
Current price of SCT2120AFC is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$12.97
$12.97
10
$11.92
$119.20
25
$11.43
$285.75
100
$10.07
$1 007.00
250
$9.57
$2 392.50
500
$8.96
$4 480.00
1000
$8.22
$8 220.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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