IHW30N135R3FKSA1

Mfr. #:: IHW30N135R3FKSA1
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors IGBT PRODUCTS
Lifecycle:: New from this manufacturer.
Datasheet:: IHW30N135R3FKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IHW30N135R3FKSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 1350 V

Collector-Emitter Saturation Voltage:: 1.65 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 60 A

Pd - Power Dissipation:: 349 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Series:: RC

Packaging:: Tube

Brand:: Infineon Technologies

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 240

Subcategory:: IGBTs

Tradename:: TRENCHSTOP

Part # Aliases:: IHW30N135R3 IHW3N135R3XK SP000989496

Unit Weight:: 1.340411 oz

Tags: IHW30N13, IHW30N1, IHW30N, IHW3, IHW

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
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Step2:
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IHW30N135R3FKSA1 Description

***Components: In a Tube of 30, Infineon IHW30N135R3FKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247

***et: Reverse Conducting IGBT With Monolithic Body Diode 1350V 30A 3-Pin TO-247

*** Source Electronics: Reverse conducting IGBT with monolithic body diode

***et Europe: Trans IGBT Chip N-CH 1.35KV 60A 3-Pin TO-247 Tube

***ical: Trans IGBT Chip N-CH 1350V 60A 349000mW Tube

***an P&S: 1350V,60A,Reverse Conducting IGBT

***ark: IGBT, SINGLE, 1.35KV, 60A, TO-247-3

***ronik: IGBT 1350V 60A 1,65V TO247-3

***i-Key: IGBT 1350V 60A 349W TO247-3

***ment14 APAC: Prices include import duty and tax. IGBT, SINGLE, 1.35KV, 60A, TO-247-3; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:1.35kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: IGBT SINGOLO 1.35KV 60A TO-247-3; Corrente di Collettore CC:60A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:349W; Tensione Collettore-Emettitore V(br)ceo:1.35kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications

IHW30N135R3FKSA1 More Information

Infineon 3rd Generation Reverse Conducting IGBTs: Infineon's 3rd Generation Reverse Conducting IGBTs have been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. Infineon RC-H technology has set the benchmark of Tj(max) of 175°C to offer higher lifetime reliability. Recent portfolio extension to 30A and 40A at 1200V and 1350V defines the new trend for higher power density and better reliability devices. 40A 1350V device is capable for switching up to 50kHz with VCE(sat) value of 1.65V at 25°C – a staggering 5% lower loss than the next best competitor.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IHW30N135R3FKSA1 DISTI # V99:2348_06377154	Infineon Technologies AG	Trans IGBT Chip N-CH 1.35KV 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	240	500:$2.5910 250:$2.7810 100:$3.0900 50:$3.4330 25:$3.8140 10:$4.2379 1:$5.5275
IHW30N135R3FKSA1 DISTI # V36:1790_06377154	Infineon Technologies AG	Trans IGBT Chip N-CH 1.35KV 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
IHW30N135R3FKSA1 DISTI # IHW30N135R3FKSA1-ND	Infineon Technologies AG	IGBT 1350V 60A 349W TO247-3 RoHS: Compliant Min Qty: 240 Container: Tube	Limited Supply - Call	240:$3.9175
IHW30N135R3FKSA1 DISTI # 33157326	Infineon Technologies AG	Trans IGBT Chip N-CH 1.35KV 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	240	500:$2.5910 250:$2.7810 100:$3.0900 50:$3.4330 25:$3.8140 10:$4.2379 3:$5.0250
IHW30N135R3FKSA1 DISTI # IHW30N135R3FKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 1.35KV 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: IHW30N135R3FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	1440:$2.3900 2400:$2.3900 960:$2.4900 480:$2.5900 240:$2.6900
IHW30N135R3FKSA1 DISTI # IHW30N135R3	Infineon Technologies AG	Trans IGBT Chip N-CH 1.35KV 60A 3-Pin TO-247 Tube (Alt: IHW30N135R3) RoHS: Compliant Min Qty: 240 Container: Tube	Asia - 0
IHW30N135R3FKSA1 DISTI # SP000989496	Infineon Technologies AG	Trans IGBT Chip N-CH 1.35KV 60A 3-Pin TO-247 Tube (Alt: SP000989496) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€1.9900 500:€2.0900 100:€2.1900 50:€2.2900 25:€2.3900 10:€2.4900 1:€2.6900
IHW30N135R3FKSA1 DISTI # 50Y1987	Infineon Technologies AG	IGBT Single Transistor, 60 A, 1.65 V, 349 W, 1.35 kV, TO-247, 3 RoHS Compliant: Yes	0	500:$3.2000 250:$3.5800 100:$3.7700 50:$3.9600 25:$4.1500 10:$4.3400 1:$5.1100
IHW30N135R3 DISTI # 726-IHW30N135R3	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS TrenchStop RC RoHS: Compliant	240	1:$5.0600 10:$4.3000 100:$3.7300 250:$3.5400 500:$3.1700
IHW30N135R3FKSA1 DISTI # 726-IHW30N135R3FKSA1	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS RoHS: Compliant	228	1:$5.0600 10:$4.3000 100:$3.7300 250:$3.5400 500:$3.1700
IHW30N135R3FKSA1 DISTI # 1107449	Infineon Technologies AG	IGBT TRENCHSTOP NCHANNEL 1350V 30A TO247, PK	54	150:£2.6500 60:£2.8500 30:£3.0570 6:£3.3200 3:£3.8470
IHW30N135R3FKSA1 DISTI # 1107449P	Infineon Technologies AG	IGBT TRENCHSTOP NCHANNEL 1350V 30A TO247, TU	1326	150:£2.6500 60:£2.8500 30:£3.0570 6:£3.3200
IHW30N135R3FKSA1 DISTI # IHW30N135R3	Infineon Technologies AG	Transistor: IGBT,1.35kV,30A,175W,TO247-3	51	1:$4.3900 3:$3.9500 10:$3.4900 30:$3.1400
IHW30N135R3FKSA1 DISTI # 2480886	Infineon Technologies AG	IGBT, SINGLE, 1.35KV, 60A, TO-247-3 RoHS: Compliant	1590	240:$5.9400 10:$7.2500 1:$8.0600
IHW30N135R3FKSA1 DISTI # 2480886	Infineon Technologies AG	IGBT, SINGLE, 1.35KV, 60A, TO-247-3 RoHS: Compliant	1591	500:£2.2000 250:£2.4600 100:£2.5900 10:£2.9900 1:£4.3300

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Availability

Stock:: 216
On Order:: 2199
Enter Quantity:

Current price of IHW30N135R3FKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$5.06~~; ~~$5.06~~

10: ~~$4.30~~; ~~$43.00~~

100: ~~$3.73~~; ~~$373.00~~

250: ~~$3.54~~; ~~$885.00~~

500: ~~$3.17~~; ~~$1 585.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IHW30N135R3FKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes