IPL65R165CFDAUMA1

Mfr. #:: IPL65R165CFDAUMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET HIGH POWER_LEGACY
Lifecycle:: New from this manufacturer.
Datasheet:: IPL65R165CFDAUMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IPL65R165CFDAUMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: VSON-4

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 21.3 A

Rds On - Drain-Source Resistance:: 149 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3.5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 86 nC

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 195 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolMOS

Packaging:: Reel

Height:: 1.1 mm

Length:: 8 mm

Series:: CoolMOS CFDA

Transistor Type:: 1 N-Channel

Width:: 8 mm

Brand:: Infineon Technologies

Fall Time:: 5.6 ns

Product Type:: MOSFET

Rise Time:: 7.6 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 52.8 ns

Typical Turn-On Delay Time:: 12.4 ns

Part # Aliases:: IPL65R165CFD SP000949254

Tags: IPL65R16, IPL65R1, IPL65R, IPL65, IPL6, IPL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPL65R165CFDAUMA1 Description

***ure Electronics: Single N-Channel 650 V 165 mOhm 86 nC CoolMOS Power Mosfet - ThinPAK 8x8

***ical: Trans MOSFET N-CH 650V 21.3A Automotive 4-Pin VSON EP T/R

***el Electronic: 0603 2.7 nF 50 V ±5% Tolerance C0G SMT Multilayer Ceramic Capacitor

***ineon SCT: Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-VSON-4, RoHS

***p One Stop: 650V COOL MOS CFD2 POWER TRANSISTOR

***ronik: N-CH 650V 21,3A 165mOhm ThinPAK

*** Services: CoC and 2-years warranty / RFQ for pricing

***ineon: 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

***ical: Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: IPB65R150CFDA Series 650 V 22.4 A CoolMOS CFDA Power Transistor - TO-263-3

*** Stop Electro: Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon SCT: 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO263-3, RoHS

***ineon: 650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting

***ure Electronics: E-Series N-Channel 650 V 0.145 O 122 nC Surface Mount Power Mosfet - D2PAK

***et: Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK

***nell: MOSFET, N-CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

***ow.cn: SIHH24N65E-T1-GE3 Vishay MOSFETs Transistor N-CH 650V 23A 4-Pin PowerPAK EP T/R - Arrow.com

***ical: Trans MOSFET N-CH 650V 23A 4-Pin PowerPAK EP T/R

***el Electronic: MOSFET N-CHAN 650V 23A POWERPAK

***or: MOSFET N-CH 650V 23A PPAK 8 X 8

***icroelectronics: N-channel 650 V, 0.125 Ohm typ., 22 A MDmesh M5 Power MOSFET in D2PAK package

***sible Micro: (CP22-1038) Transistor MOSFET N-Channel 650V 22A D2PAK (STB30N65M5)

***ure Electronics: STB30N65M5: 650 V 0.139 Ohm Surface Mount N-Channel Power MOSFET - D2PAK

***ical: Trans MOSFET N-CH Si 650V 22A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 22A I(D), 650V, 0.139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***icroelectronics: N-channel 650 V, 0.124 Ohm typ., 22 A MDmesh M5 Power MOSFET in D2PAK package

***r Electronics: Power Field-Effect Transistor, 22A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK T/R

***ark: MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain

***et: Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK

***nell: MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

IPL65R165CFDAUMA1 More Information

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

Part #	Mfg.	Description	Stock	Price
IPL65R165CFDAUMA1 DISTI # IPL65R165CFDAUMA1-ND	Infineon Technologies AG	MOSFET N-CH 4VSON RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$2.0489
IPL65R165CFDAUMA1 DISTI # IPL65R165CFD	Infineon Technologies AG	Trans MOSFET N-CH 700V 21.3A 5-Pin VSON T/R (Alt: IPL65R165CFD) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 10
IPL65R165CFDAUMA1 DISTI # IPL65R165CFDAUMA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 21.3A 5-Pin VSON T/R - Tape and Reel (Alt: IPL65R165CFDAUMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.9900 6000:$1.8900 12000:$1.7900 18000:$1.7900 30000:$1.6900
IPL65R165CFD DISTI # 726-IPL65R165CFD	Infineon Technologies AG	MOSFET HIGH POWER_LEGACY RoHS: Compliant	0	1:$3.7100 10:$3.1600 100:$2.7400 250:$2.6000 500:$2.3300 1000:$1.9700 3000:$1.8700
IPL65R165CFDAUMA1 DISTI # 726-PL65R165CFDAUMA1	Infineon Technologies AG	MOSFET HIGH POWER_LEGACY RoHS: Compliant	0	1:$3.7100 10:$3.1600 100:$2.7400 250:$2.6000 500:$2.3300 1000:$1.9700 3000:$1.8700

Image	Part #	Description
	Mfr.#: IPL65R165CFD OMO.#: OMO-IPL65R165CFD	MOSFET HIGH POWER_LEGACY
	Mfr.#: IPL65R165CFDAUMA1 OMO.#: OMO-IPL65R165CFDAUMA1	MOSFET HIGH POWER_LEGACY
	Mfr.#: IPL65R165CFDAUMA2 OMO.#: OMO-IPL65R165CFDAUMA2	MOSFET
	Mfr.#: IPL65R165CFDAUMA2 OMO.#: OMO-IPL65R165CFDAUMA2-INFINEON-TECHNOLOGIES	HIGH POWER_LEGACY
	Mfr.#: IPL65R165CFD OMO.#: OMO-IPL65R165CFD-1190	MOSFET HIGH POWER_LEGACY
	Mfr.#: IPL65R165CFD(SP000949254 OMO.#: OMO-IPL65R165CFD-SP000949254-1190	New and Original
	Mfr.#: IPL65R165CFDAUMA1 OMO.#: OMO-IPL65R165CFDAUMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 4VSON

IPL65R165CFDAUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes