FDMS4D4N08C

FDMS4D4N08C
Mfr. #:
FDMS4D4N08C
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET PTNG 80/20V Nch Power Trench MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
FDMS4D4N08C Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
Power-56-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
80 V
Id - Continuous Drain Current:
123 A
Rds On - Drain-Source Resistance:
3.7 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
56 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
125 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Series:
FDMS4D4N08C
Transistor Type:
1 N-Channel
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
98 S
Fall Time:
5 ns
Product Type:
MOSFET
Rise Time:
7 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
25 ns
Typical Turn-On Delay Time:
17 ns
Unit Weight:
0.002402 oz
Tags
FDMS4, FDMS, FDM
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
PowerTrench MOSFET N-Channel Shielded Gate 80 V 123 A 4.3m Ohm 8-Pin Power 56 T/R
***emi
N-Channel Shielded Gate PowerTrench® MOSFET 80V, 123A, 4.3mΩ
***rchild Semiconductor
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Part # Mfg. Description Stock Price
FDMS4D4N08C
DISTI # V36:1790_18470533
ON SemiconductorN-Channel Shielded gate power Trench MOSFET0
    FDMS4D4N08C
    DISTI # FDMS4D4N08C-ND
    ON SemiconductorMOSFET N-CH 80V 123A 8PQFN
    RoHS: Not compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 3000:$1.4244
    FDMS4D4N08C
    DISTI # FDMS4D4N08C
    ON SemiconductorPowerTrench MOSFET N-Channel Shielded Gate 80 V 123 A 4.3m Ohm 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS4D4N08C)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 6000:$1.5900
    • 12000:$1.5900
    • 18000:$1.5900
    • 30000:$1.5900
    • 3000:$1.6900
    FDMS4D4N08C
    DISTI # 512-FDMS4D4N08C
    ON SemiconductorMOSFET PTNG 80/20V Nch Power Trench MOSFET
    RoHS: Compliant
    0
    • 1:$2.6900
    • 10:$2.2800
    • 100:$1.9800
    • 250:$1.8800
    • 500:$1.6800
    • 1000:$1.4200
    • 3000:$1.3500
    • 6000:$1.3000
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    FDMS4D4N08C

    Mfr.#: FDMS4D4N08C

    OMO.#: OMO-FDMS4D4N08C

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    Mfr.#: FDMS4D0N12C

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    PTNG 120V N-FET PQFN56
    FDMS4D4N08C

    Mfr.#: FDMS4D4N08C

    OMO.#: OMO-FDMS4D4N08C-ON-SEMICONDUCTOR

    MOSFET N-CH 80V 123A 8PQFN
    Availability
    Stock:
    Available
    On Order:
    3500
    Enter Quantity:
    Current price of FDMS4D4N08C is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.24
    $2.24
    10
    $1.90
    $19.00
    100
    $1.52
    $152.00
    500
    $1.33
    $665.00
    1000
    $1.10
    $1 100.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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