SIE802DF-T1-E3

Mfr. #:: SIE802DF-T1-E3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 30V 60A 125W 1.9mohm @ 10V
Lifecycle:: New from this manufacturer.
Datasheet:: SIE802DF-T1-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIE802DF-T1-E3 Datasheet SIE802DF-T1-E3 Datasheet (P4-P6)SIE802DF-T1-E3 Datasheet (P7-P9)SIE802DF-T1-E3 Datasheet (P10)
ECAD Model:
More Information:: SIE802DF-T1-E3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Tradename:: TrenchFET, PolarPAK

Packaging:: Reel

Series:: SIE

Brand:: Vishay / Siliconix

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Part # Aliases:: SIE802DF-E3

Tags: SIE80, SIE8, SIE

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

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Vacuum Packaging with PL

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SIE802DF-T1-E3 Description

***ure Electronics: Single N-Channel 30 V 0.0019 Ohms Surface Mount Power Mosfet - PolarPAK

***ical: Trans MOSFET N-CH Si 30V 42.7A 10-Pin PolarPAK T/R

***p One Stop Global: Trans MOSFET N-CH 30V 42.7A 10-Pin PolarPAK T/R

***C: Trans MOSFET N-CH 30V 42.7A 10-Pin PolarPAK

***ponent Sense: TRANS N-CH 30V-TRANSISTOR FET N-CH

***i-Key: MOSFET N-CH 30V 60A 10-POLARPAK

***: N-CHANNEL 30-V (D-S) MOSFET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:60000mA; On Resistance, Rds(on):0.0026ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.2V ;RoHS Compliant: Yes

***nell: MOSFET, N, POLAR PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:202A; Resistance, Rds On:0.0019ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.2V; Case Style:PolarPAK; Termination Type:SMD; Base Number:802; Current, Idm Pulse:100A; N-channel Gate Charge:50nC; Power Dissipation:125mW; Power, Pd:125W; Resistance, Rds on @ Vgs = 10V:0.0019ohm; Resistance, Rds on @ Vgs = 4.5V:0.0026ohm; Voltage, Rds Measurement:10V; Voltage, Vds Max:30V; Voltage, Vgs th Max:3.7V; Voltage, Vgs th Min:1.5V

SIE802DF-T1-E3 More Information

N-Channel PolarPAK® Power MOSFETs: Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.

Market price

Part #	Mfg.	Description	Stock	Price
SIE802DF-T1-E3 DISTI # V72:2272_09215702	Vishay Intertechnologies	Trans MOSFET N-CH Si 30V 42.7A 10-Pin PolarPAK T/R RoHS: Compliant	0
SIE802DF-T1-E3 DISTI # SIE802DF-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 60A 10-POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$1.8574
SIE802DF-T1-E3 DISTI # SIE802DF-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 42.7A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE802DF-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	18000:$1.6900 30000:$1.6900 6000:$1.7900 12000:$1.7900 3000:$1.8900
SIE802DF-T1-E3 DISTI # 781-SIE802DF-T1-E3	Vishay Intertechnologies	MOSFET 30V 60A 125W 1.9mohm @ 10V RoHS: Compliant	3000	1:$3.7200 10:$3.0800 100:$2.5400 250:$2.4600 500:$2.2000 1000:$1.8600 3000:$1.7600
SIE802DF-T1-E3	Vishay Intertechnologies		1106
SIE802DF-T1-E3	Vishay Semiconductors	42.7 A, 30 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET	100	11:$1.8000 4:$2.4000 1:$3.6000
SIE802DF-T1-E3	Vishay Siliconix	42.7 A, 30 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET	19	11:$1.8000 4:$2.4000 1:$3.6000
SIE802DF-T1-E3	Vishay Intertechnologies	MOSFET 30V 60A 125W 1.9mohm @ 10V	Americas -

Related products

Image	Part #	Description
	Mfr.#: SIE802DF-T1-E3 OMO.#: OMO-SIE802DF-T1-E3	MOSFET 30V 60A 125W 1.9mohm @ 10V
	Mfr.#: SIE802DF-T1-GE3 OMO.#: OMO-SIE802DF-T1-GE3	MOSFET 30V 202A 125W 1.9mohm @ 10V
	Mfr.#: SIE802DF-T1-GE3 OMO.#: OMO-SIE802DF-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 30V 202A 125W 1.9mohm @ 10V
	Mfr.#: SIE802DF-T1-E3 OMO.#: OMO-SIE802DF-T1-E3-VISHAY	MOSFET N-CH 30V 60A 10-POLARPAK

Availability

Stock:: Available
On Order:: 1986
Enter Quantity:

Current price of SIE802DF-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$3.72~~; ~~$3.72~~

10: ~~$3.08~~; ~~$30.80~~

100: ~~$2.54~~; ~~$254.00~~

250: ~~$2.46~~; ~~$615.00~~

500: ~~$2.20~~; ~~$1 100.00~~

1000: ~~$1.86~~; ~~$1 860.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SIE802DF-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes