IKA15N65F5XKSA1

Mfr. #:: IKA15N65F5XKSA1
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors IGBT PRODUCTS
Lifecycle:: New from this manufacturer.
Datasheet:: IKA15N65F5XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IKA15N65F5XKSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-220FP-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 650 V

Collector-Emitter Saturation Voltage:: 1.6 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 14 A

Pd - Power Dissipation:: 33.3 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Series:: TRENCHSTOP 5 F5

Packaging:: Tube

Brand:: Infineon Technologies

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 500

Subcategory:: IGBTs

Tradename:: TRENCHSTOP

Part # Aliases:: IKA15N65F5 SP000973416

Unit Weight:: 0.211644 oz

Tags: IKA15N65, IKA15N6, IKA15, IKA1, IKA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKA15N65F5XKSA1 Description

***ical: Trans IGBT Chip N-CH 650V 14A 33300mW 3-Pin(3+Tab) TO-220FP Tube

***et Europe: Trans IGBT Chip N-CH 650V 14A 3-Pin TO-220 Tube

***p One Stop Global: HIGH SPEED 5 FAST IGBT IN TRENCHSTOPTM 5 TECHNOLOGY COPACKED WITHRAPID 1 FAST AND SOFT ANTI PARALLEL DIODE

***i-Key: IGBT 650V 14A 33.3W PG-TO220-3FP

***ronik: IGBT 650V 15A 1,6V TO220-3

***ark: IGBT, 650V, 15A, TO220-3

***ukat: 650V 14A 33,3W TO220-Fullpak

***ment14 APAC: Prices include import duty and tax. IGBT, 650V, 15A, TO220-3; DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:33.3W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Transistor Type:IGBT

***nell: IGBT, 650V, 15A, TO220-3; Corrente di Collettore CC:15A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:33.3W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-40°C; Tipo di Transistor:IGBT

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

IKA15N65F5XKSA1 More Information

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 F5 Discrete IGBTs: Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.

Market price

Part #	Mfg.	Description	Stock	Price
IKA15N65F5XKSA1 DISTI # IKA15N65F5XKSA1-ND	Infineon Technologies AG	IGBT 650V 14A 33.3W PG-TO220-3FP RoHS: Compliant Min Qty: 1 Container: Tube	373In Stock	5000:$1.1908 2500:$1.2057 500:$1.5630 100:$1.9024 25:$2.2328 10:$2.3670 1:$2.6300
IKA15N65F5XKSA1 DISTI # IKA15N65F5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 14A 3-Pin TO-220 Tube - Rail/Tube (Alt: IKA15N65F5XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	5000:$1.0799 3000:$1.0999 2000:$1.1379 1000:$1.1809 500:$1.2249
IKA15N65F5XKSA1 DISTI # IKA15N65F5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 14A 3-Pin TO-220 Tube - Bulk (Alt: IKA15N65F5XKSA1) RoHS: Compliant Min Qty: 343 Container: Bulk	Americas - 0	3430:$0.9269 1715:$0.9439 1029:$0.9769 686:$1.0129 343:$1.0509
IKA15N65F5XKSA1 DISTI # SP000973416	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 14A 3-Pin TO-220 Tube (Alt: SP000973416) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€0.9529 500:€0.9879 100:€1.0259 50:€1.0669 25:€1.1119 10:€1.2129 1:€1.3339
IKA15N65F5 DISTI # 726-IKA15N65F5-ES	Infineon Technologies AG	IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS: Compliant	485	1:$2.5000 10:$2.1200 100:$1.7000 500:$1.4800 1000:$1.2300
IKA15N65F5XKSA1 DISTI # 726-IKA15N65F5XKSA1	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS RoHS: Compliant	341	1:$2.5000 10:$2.1200 100:$1.7000 500:$1.4800 1000:$1.2300
IKA15N65F5XKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 14A I(C), 650V V(BR)CES, N-Channel RoHS: Compliant	7290	1000:$0.9600 500:$1.0100 100:$1.0500 25:$1.1000 1:$1.1800
IKA15N65F5XKSA1 DISTI # 2363283	Infineon Technologies AG	IGBT, 650V, 15A, TO220-3	83	500:£1.1600 250:£1.2400 100:£1.3300 10:£1.6700 1:£2.2100
IKA15N65F5XKSA1 DISTI # IKA15N65F5	Infineon Technologies AG	650V 14A 33,3W TO220-Fullpak RoHS: Compliant	500	1:€1.6700 10:€1.2700 50:€1.0700 100:€0.9800

Image	Part #	Description
	Mfr.#: STGF20M65DF2 OMO.#: OMO-STGF20M65DF2	IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss
	Mfr.#: BS170-D75Z OMO.#: OMO-BS170-D75Z	MOSFET N-Ch Enhancement Mode Field Effect
	Mfr.#: STGF20M65DF2 OMO.#: OMO-STGF20M65DF2-STMICROELECTRONICS	IGBT TRENCH 650V 40A TO220FP
	Mfr.#: BS170-D75Z OMO.#: OMO-BS170-D75Z-ON-SEMICONDUCTOR	MOSFET N-CH 60V 500MA TO-92

IKA15N65F5XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes