IPB100N08S2-07

Mfr. #:: IPB100N08S2-07
Manufacturer:: Infineon Technologies
Description:: RF Bipolar Transistors MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS
Lifecycle:: New from this manufacturer.
Datasheet:: IPB100N08S2-07 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IPB100N08S2-07 more Information

Product Attribute
Attribute Value

Manufacturer: INFINEON

Product Category: FETs - Single

Series: OptiMOS

Packaging: Reel

Part-Aliases: IPB100N08S207ATMA1 IPB100N08S207XT SP000219044

Unit-Weight: 0.139332 oz

Mounting-Style: SMD/SMT

Tradename: OptiMOS

Package-Case: TO-252-3

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 300 W

Maximum-Operating-Temperature: + 175 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 30 ns

Rise-Time: 51 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 100 A

Vds-Drain-Source-Breakdown-Voltage: 75 V

Rds-On-Drain-Source-Resistance: 7.1 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 61 ns

Typical-Turn-On-Delay-Time: 26 ns

Channel-Mode: Enhancement

Tags: IPB100N08, IPB100N0, IPB100N, IPB100, IPB10, IPB1, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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IPB100N08S2-07 More Information

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

75V to 100V N-Channel Automotive MOSFETs: Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IPB100N08S207ATMA1 DISTI # V72:2272_06383028	Infineon Technologies AG	Trans MOSFET N-CH 75V 100A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$1.3653 500:$1.4990 250:$1.6386 100:$1.7308 25:$1.9702 10:$2.0336 1:$2.2361
IPB100N08S207ATMA1 DISTI # IPB100N08S207ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 75V 100A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$1.4977
IPB100N08S207ATMA1 DISTI # 26998552	Infineon Technologies AG	Trans MOSFET N-CH 75V 100A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$1.3653 500:$1.4990 250:$1.6386 100:$1.7308 25:$1.9702 10:$2.0336 6:$2.2361
IPB100N08S207ATMA1 DISTI # IPB100N08S207ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB100N08S207ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.2900 2000:$1.2900 4000:$1.1900 6000:$1.1900 10000:$1.0900
IPB100N08S207ATMA1 DISTI # SP000219044	Infineon Technologies AG	Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) TO-263 (Alt: SP000219044) RoHS: Compliant Min Qty: 1000	Europe - 0	1000:€1.6900 2000:€1.2900 4000:€1.1900 6000:€1.1900 10000:€1.0900
IPB100N08S2-07 DISTI # 726-IPB100N08S207	Infineon Technologies AG	MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS RoHS: Compliant	619	1:$2.7700 10:$2.3500 100:$1.8800 500:$1.6500 1000:$1.3700 2000:$1.2700 5000:$1.2300
IPB100N08S207ATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 100A I(D), 75V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	13677	1000:$1.3100 500:$1.3800 100:$1.4300 25:$1.5000 1:$1.6100
IPB100N08S207ATMA1 DISTI # C1S322000694686	Infineon Technologies AG	MOSFETs RoHS: Compliant	1000	250:$1.6508 100:$1.7481 25:$1.9797 10:$2.0392 1:$2.2411

Related products

Image	Part #	Description
	Mfr.#: IPB100N04S204ATMA4 OMO.#: OMO-IPB100N04S204ATMA4	MOSFET N-CHANNEL_30/40V
	Mfr.#: IPB100N08S207ATMA1 OMO.#: OMO-IPB100N08S207ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 75V 100A TO263-3
	Mfr.#: IPB100N04S4-02D OMO.#: OMO-IPB100N04S4-02D-1190	MOSFET N-Ch 40V 100A D2PAK-2
	Mfr.#: IPB100N04S4-H2 4N04H2 OMO.#: OMO-IPB100N04S4-H2-4N04H2-1190	New and Original
	Mfr.#: IPB100N06S2L-05 PN06L05 OMO.#: OMO-IPB100N06S2L-05-PN06L05-1190	New and Original
	Mfr.#: IPB100N06S3 OMO.#: OMO-IPB100N06S3-1190	New and Original
	Mfr.#: IPB100N06S3-03 GRN OMO.#: OMO-IPB100N06S3-03-GRN-1190	New and Original
	Mfr.#: IPB100N12S3-05 OMO.#: OMO-IPB100N12S3-05-1190	New and Original
	Mfr.#: IPB100N04S2-04 OMO.#: OMO-IPB100N04S2-04-317	RF Bipolar Transistors MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS
	Mfr.#: IPB100N04S402DXTMA1 OMO.#: OMO-IPB100N04S402DXTMA1-317	RF Bipolar Transistors MOSFET N-Ch 40V 100A D2PAK-2

Availability

Stock:: Available
On Order:: 3000
Enter Quantity:

Current price of IPB100N08S2-07 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.84~~; ~~$1.84~~

10: ~~$1.75~~; ~~$17.53~~

100: ~~$1.66~~; ~~$166.05~~

500: ~~$1.57~~; ~~$784.15~~

1000: ~~$1.48~~; ~~$1 476.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB100N08S2-07

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes