FQB44N10TM

FQB44N10TM
Mfr. #:
FQB44N10TM
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 100V N-Channel QFET
Lifecycle:
New from this manufacturer.
Datasheet:
FQB44N10TM Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
43.5 A
Rds On - Drain-Source Resistance:
39 mOhms
Vgs - Gate-Source Voltage:
25 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
3.75 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
4.83 mm
Length:
10.67 mm
Series:
FQB44N10
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
9.65 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
30 S
Fall Time:
100 ns
Product Type:
MOSFET
Rise Time:
190 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
90 ns
Typical Turn-On Delay Time:
19 ns
Part # Aliases:
FQB44N10TM_NL
Unit Weight:
0.045856 oz
Tags
FQB44N10T, FQB44N1, FQB44, FQB4, FQB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 100 V, 43.5 A, 52 mΩ, D2PAK
*** Source Electronics
Trans MOSFET N-CH 100V 43.5A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 43.5A D2PAK
***ure Electronics
N-Channel 100 V 0.039 Ohm 48 nC SMT QFET Mosfet - TO-263-3
***roFlash
Power Field-Effect Transistor, 43.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:43.5A; On Resistance, Rds(on):0.039ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:2-TO-263 ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Part # Mfg. Description Stock Price
FQB44N10TM
DISTI # V72:2272_06301134
ON Semiconductor100V N-CHANNEL QFET800
  • 500:$0.8683
  • 250:$0.9648
  • 100:$1.0720
  • 25:$1.3531
  • 10:$1.3787
  • 1:$1.7745
FQB44N10TM
DISTI # V79:2366_17777658
ON Semiconductor100V N-CHANNEL QFET650
  • 800:$0.8028
  • 100:$1.0983
  • 10:$1.3580
  • 1:$1.7612
FQB44N10TM
DISTI # V36:1790_06301134
ON Semiconductor100V N-CHANNEL QFET0
  • 800:$0.7640
FQB44N10TM
DISTI # FQB44N10TMTR-ND
ON SemiconductorMOSFET N-CH 100V 43.5A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
800In Stock
  • 5600:$0.7961
  • 2400:$0.8267
  • 1600:$0.8879
  • 800:$0.9676
FQB44N10TM
DISTI # FQB44N10TMCT-ND
ON SemiconductorMOSFET N-CH 100V 43.5A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
800In Stock
  • 100:$1.4192
  • 10:$1.7660
  • 1:$1.9600
FQB44N10TM
DISTI # FQB44N10TMDKR-ND
ON SemiconductorMOSFET N-CH 100V 43.5A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
800In Stock
  • 100:$1.4192
  • 10:$1.7660
  • 1:$1.9600
FQB44N10TM
DISTI # 30353773
ON Semiconductor100V N-CHANNEL QFET800
  • 500:$0.8683
  • 250:$0.9648
  • 100:$1.0720
  • 25:$1.3531
  • 11:$1.3787
FQB44N10TM
DISTI # 32925038
ON Semiconductor100V N-CHANNEL QFET800
  • 4800:$0.6089
  • 3200:$0.6137
  • 1600:$0.6216
  • 800:$0.6256
FQB44N10TM
DISTI # 26111917
ON Semiconductor100V N-CHANNEL QFET650
  • 800:$0.8630
  • 100:$1.1807
  • 15:$1.4599
FQB44N10TM
DISTI # FQB44N10TM
ON SemiconductorTrans MOSFET N-CH 100V 43.5A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB44N10TM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Europe - 233600
  • 8000:€0.5749
  • 4800:€0.6189
  • 3200:€0.6709
  • 1600:€0.7319
  • 800:€0.8949
FQB44N10TM
DISTI # FQB44N10TM
ON SemiconductorTrans MOSFET N-CH 100V 43.5A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB44N10TM)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 1600
  • 8000:$0.6149
  • 4800:$0.6309
  • 3200:$0.6389
  • 1600:$0.6469
  • 800:$0.6509
FQB44N10TM
DISTI # FQB44N10TM
ON SemiconductorTrans MOSFET N-CH 100V 43.5A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: FQB44N10TM)
RoHS: Compliant
Min Qty: 358
Container: Bulk
Americas - 0
  • 3580:$0.8639
  • 1790:$0.8859
  • 1074:$0.8969
  • 716:$0.9089
  • 358:$0.9149
FQB44N10TM
DISTI # FQB44N10TM
ON SemiconductorTrans MOSFET N-CH 100V 43.5A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB44N10TM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Asia - 0
  • 40000:$0.7936
  • 20000:$0.8068
  • 8000:$0.8347
  • 4000:$0.8645
  • 2400:$0.8965
  • 1600:$0.9310
  • 800:$0.9682
FQB44N10TM
DISTI # 38C7246
ON SemiconductorN CH MOSFET, 100V, 43.5A, D2-PAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:43.5A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes0
  • 9600:$0.7500
  • 2400:$0.7730
  • 800:$0.8450
  • 1:$0.8500
FQB44N10TM
DISTI # 512-FQB44N10TM
ON SemiconductorMOSFET 100V N-Channel QFET
RoHS: Compliant
1133
  • 1:$1.6300
  • 10:$1.3900
  • 100:$1.1100
  • 500:$0.9750
  • 800:$0.8080
FQB44N10TMON SemiconductorPower Field-Effect Transistor, 43.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
800
  • 1000:$0.9200
  • 500:$0.9700
  • 100:$1.0100
  • 25:$1.0500
  • 1:$1.1300
FQB44N10TMFairchild Semiconductor CorporationPower Field-Effect Transistor, 43.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
30160
  • 1000:$0.9200
  • 500:$0.9700
  • 100:$1.0100
  • 25:$1.0500
  • 1:$1.1300
FQB44N10TMFairchild Semiconductor Corporation 80
    FQB44N10TM
    DISTI # 6710895
    ON SemiconductorMOSFET N-CHANNEL 100V 43.5A D2PAK, EA421
    • 500:£0.5300
    • 250:£0.5800
    • 100:£0.6100
    • 25:£0.7700
    • 1:£2.0000
    FQB44N10TM
    DISTI # 6710895P
    ON SemiconductorMOSFET N-CHANNEL 100V 43.5A D2PAK, RL5553
    • 500:£0.5300
    • 250:£0.5800
    • 100:£0.6100
    • 25:£0.7700
    FQB44N10TM
    DISTI # XSKDRABV0019384
    ON SEMICONDUCTORN-Channel1000V800mA21FlangeMountDepletionModePowerMosfet-TO-220
    RoHS: Compliant
    171200 in Stock0 on Order
    • 171200:$0.8680
    • 800:$0.9300
    Image Part # Description
    BC857BLT1G

    Mfr.#: BC857BLT1G

    OMO.#: OMO-BC857BLT1G

    Bipolar Transistors - BJT 100mA 50V PNP
    BC857BLT1G

    Mfr.#: BC857BLT1G

    OMO.#: OMO-BC857BLT1G-ON-SEMICONDUCTOR

    Bipolar Transistors - BJT 100mA 50V PNP
    Availability
    Stock:
    933
    On Order:
    2916
    Enter Quantity:
    Current price of FQB44N10TM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.52
    $1.52
    10
    $1.29
    $12.90
    100
    $1.03
    $103.00
    500
    $0.91
    $454.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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