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IPG16N10S4L61AATMA1

IPG16N10S4L61AATMA1
Mfr. #:
IPG16N10S4L61AATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_100+
Lifecycle:
New from this manufacturer.
Datasheet:
IPG16N10S4L61AATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPG16N10S4L61AATMA1 DatasheetIPG16N10S4L61AATMA1 Datasheet (P4-P6)IPG16N10S4L61AATMA1 Datasheet (P7-P9)
ECAD Model:
More Information:
IPG16N10S4L61AATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
16 A
Rds On - Drain-Source Resistance:
78 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.1 V
Vgs - Gate-Source Voltage:
16 V
Qg - Gate Charge:
11 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
29 W
Configuration:
Dual
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Transistor Type:
2 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Fall Time:
4 ns
Product Type:
MOSFET
Rise Time:
1 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
5 ns
Typical Turn-On Delay Time:
2 ns
Part # Aliases:
IPG16N10S4L-61A SP001102932
Tags
IPG16, IPG1, IPG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON T/R
***et Europe
Trans MOSFET N-CH 100V 16A 8-Pin TDSON T/R
***i-Key
MOSFET 2N-CH 8TDSON
***ineon
Summary of Features: Dual N-channel Logic Level - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested; Feasible for automatic optical inspection (AOI)
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Inductive Wireless Charging – In-Car Charging
Infineon Technologies Inductive Wireless Charging – In-Car Charging allows for placing devices in a designated area to charge without a wired connection. Automotive inductive wireless charging is growing in the latest generation of cars. In fact, it’s predicted that most cars will have the feature in the very near future.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Part # Mfg. Description Stock Price
IPG16N10S4L61AATMA1
DISTI # 33151844		Infineon Technologies AGTrans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON T/R5000
  • 5000:$0.3414
IPG16N10S4L61AATMA1
DISTI # IPG16N10S4L61AATMA1-ND		Infineon Technologies AGMOSFET 2N-CH 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.3905
IPG16N10S4L61AATMA1
DISTI # IPG16N10S4L61AATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 16A 8-Pin TDSON T/R - Bulk (Alt: IPG16N10S4L61AATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Bulk		Americas - 0
  • 10000:$0.3169
  • 5000:$0.3229
  • 3000:$0.3339
  • 2000:$0.3469
  • 1000:$0.3599
IPG16N10S4L61AATMA1
DISTI # IPG16N10S4L61AATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 16A 8-Pin TDSON T/R - Tape and Reel (Alt: IPG16N10S4L61AATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.3549
  • 30000:$0.3609
  • 20000:$0.3739
  • 10000:$0.3879
  • 5000:$0.4019
IPG16N10S4L61AATMA1
DISTI # SP001102932		Infineon Technologies AGTrans MOSFET N-CH 100V 16A 8-Pin TDSON T/R (Alt: SP001102932)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€0.3239
  • 30000:€0.3489
  • 20000:€0.3779
  • 10000:€0.4119
  • 5000:€0.5039
IPG16N10S4L61AATMA1
DISTI # 726-IPG16N10S4L61AAT		Infineon Technologies AGMOSFET N-CHANNEL_100+5140
  • 1:$0.9100
  • 10:$0.7830
  • 100:$0.6020
  • 500:$0.5320
  • 1000:$0.4200
  • 5000:$0.3720
  • 10000:$0.3580
IPG16N10S4L61AATMA1Infineon Technologies AGPower Field-Effect Transistor
RoHS: Not Compliant		24615
  • 1000:$0.3300
  • 500:$0.3500
  • 100:$0.3600
  • 25:$0.3800
  • 1:$0.4100
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Availability
Stock:
Available
On Order:
1986
Enter Quantity:
Current price of IPG16N10S4L61AATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.91
$0.91
10
$0.78
$7.83
100
$0.60
$60.20
500
$0.53
$266.00
1000
$0.42
$420.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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