A3I35D025WNR1

Mfr. #:: A3I35D025WNR1
Manufacturer:: NXP Semiconductors
Description:: Airfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 3.4 W Avg., 28 V
Lifecycle:: New from this manufacturer.
Datasheet:: A3I35D025WNR1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
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More Information:: A3I35D025WNR1 more Information A3I35D025WNR1 Product Details

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Tags: A3I35D02, A3I3, A3I

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A3I35D025WNR1 More Information

RF High-Power Wideband Drivers: NXP Semiconductors RF High-Power Wideband Drivers provide macro cellular networks that simultaneously cover multiple cellular bands. These drivers come with a superior level of integration and functionality that enables high quality and high-speed network connectivity. The RF wideband drivers are designed for digital pre-distortion error correction systems and incorporate on-chip matching (50Ω input and DC blocked). These drivers are optimized for Doherty applications and wide instantaneous bandwidth applications.

NXP RF-IF Solutions: NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More

Airfast® Third-Generation Power Amplifiers: NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.

Market price

Part #	Mfg.	Description	Stock	Price
A3I35D025WNR1 DISTI # V36:1790_21814491	NXP Semiconductors	Airfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 3.4 W Avg., 28 V	0	500000:$27.4800 250000:$27.4900 50000:$32.4300 5000:$45.8600 500:$48.4400
A3I35D025WNR1 DISTI # A3I35D025WNR1	Avnet, Inc.	RF Power Amplifier Single 3200MHz to 4000MHz 28.9dB 17-Pin TO-270WB Thru-Hole T/R (Alt: A3I35D025WNR1) RoHS: Compliant Min Qty: 500 Container: Tape and Reel	Europe - 0	5000:€26.8900 3000:€28.8900 2000:€31.0900 1000:€32.2900 500:€33.6900
A3I35D025WNR1 DISTI # A3I35D025WNR1	Avnet, Inc.	RF Power Amplifier Single 3200MHz to 4000MHz 28.9dB 17-Pin TO-270WB Thru-Hole T/R - Tape and Reel (Alt: A3I35D025WNR1) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	5000:$28.7900 3000:$29.3900 2000:$30.4900 1000:$31.6900 500:$32.9900
A3I35D025WNR1 DISTI # 65AC3711	NXP Semiconductors	AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER, 3200-4000 MHZ, 3.4 W AVG., 28 V TR	0	250:$29.4800 100:$30.3800 50:$31.0600 25:$33.3300 10:$35.3700 5:$37.6400 1:$39.6800
A3I35D025WNR1 DISTI # 771-A3I35D025WNR1	NXP Semiconductors	RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V RoHS: Compliant	490	1:$48.4400 5:$45.8300 10:$45.1700 25:$41.9000 50:$40.5500 100:$39.2800 250:$34.0100 500:$33.1700
A3I35D025WNR1 DISTI # A3I35D025WNR1	NXP Semiconductors	RF & MW POWER AMPLIFIER RoHS: Compliant	0	500:$38.5400

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	Mfr.#: A3I35D025WNR1 OMO.#: OMO-A3I35D025WNR1	RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
	Mfr.#: A3I35D012WNR1 OMO.#: OMO-A3I35D012WNR1	RF Amplifier A3I35D012WN/FM17F///REEL 13 Q2 DP
	Mfr.#: A3I35D012WGNR1 OMO.#: OMO-A3I35D012WGNR1	RF Amplifier A3I35D012WGN/FM17F///REEL 13 Q2 DP
	Mfr.#: A3I35D025WGNR1 OMO.#: OMO-A3I35D025WGNR1	RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
	Mfr.#: A3I35D025WNR1 OMO.#: OMO-A3I35D025WNR1-1152	Airfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 3.4 W Avg., 28 V
	Mfr.#: A3I35D025GN OMO.#: OMO-A3I35D025GN-1190	New and Original

Availability

Stock:: Available
On Order:: 5500
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Current price of A3I35D025WNR1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

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Ext. Price

1: ~~$0.00~~; ~~$0.00~~

10: ~~$0.00~~; ~~$0.00~~

100: ~~$0.00~~; ~~$0.00~~

500: ~~$0.00~~; ~~$0.00~~

1000: ~~$0.00~~; ~~$0.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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A3I35D02 3
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A3I35D025WNR1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes