A3I35D02

A3I35D025WNR1 vs A3I35D025WGNR1 vs A3I35D025GN

 
PartNumberA3I35D025WNR1A3I35D025WGNR1A3I35D025GN
DescriptionRF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28VRF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
ManufacturerNXPNXP-
Product CategoryRF AmplifierRF Amplifier-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-270WB-17TO-270WBG-17-
TypeWidebandWideband-
Operating Frequency3200 MHz to 4000 MHz3200 MHz to 4000 MHz-
Gain28.9 dB28.5 dB-
Operating Supply Voltage28 V28 V-
Test Frequency3800 MHz3800 MHz-
Operating Supply Current260 mA260 mA-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesA3I35D025A3I35D025-
PackagingReelReel-
BrandNXP SemiconductorsNXP Semiconductors-
Number of Channels2 Channel2 Channel-
Moisture SensitiveYes--
Product TypeRF AmplifierRF Amplifier-
Factory Pack Quantity500500-
SubcategoryWireless & RF Integrated CircuitsWireless & RF Integrated Circuits-
Part # Aliases935373852528935373851528-
Manufacturer Part # Description RFQ
NXP Semiconductors
NXP Semiconductors
A3I35D025WNR1 RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
A3I35D025WGNR1 RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
A3I35D025WNR1 Airfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 3.4 W Avg., 28 V
A3I35D025GN New and Original
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