FJP5200OTU

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

230 V

Collector- Base Voltage VCBO:

230 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

15 A

Gain Bandwidth Product fT:

30 MHz

Minimum Operating Temperature:

- 50 C

Maximum Operating Temperature:

+ 150 C

Series:

FJP5200

DC Current Gain hFE Max:

80

Height:

9.4 mm

Length:

10.67 mm

Packaging:

Tube

Width:

4.83 mm

Brand:

ON Semiconductor / Fairchild

DC Collector/Base Gain hfe Min:

80 at 1 A, 5 V

Pd - Power Dissipation:

100000 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

50

Subcategory:

Transistors

Unit Weight:

0.063493 oz

Tags

FJP52, FJP5, FJP