IPW65R190C6

IPW65R190C6
Mfr. #:
IPW65R190C6
Manufacturer:
Rochester Electronics, LLC
Description:
Darlington Transistors MOSFET N-Ch 700V 20.2A TO247-3 CoolMOS C6
Lifecycle:
New from this manufacturer.
Datasheet:
IPW65R190C6 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
Transistors - FETs, MOSFETs - Single
Series
CoolMOS C6
Packaging
Tube
Part-Aliases
IPW65R190C6FKSA1 IPW65R190C6XK SP000863902
Unit-Weight
1.340411 oz
Mounting-Style
Through Hole
Tradename
CoolMOS
Package-Case
TO-247-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
151 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
10 ns
Rise-Time
12 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
20.2 A
Vds-Drain-Source-Breakdown-Voltage
700 V
Rds-On-Drain-Source-Resistance
190 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
133 nS
Qg-Gate-Charge
73 nC
Tags
IPW65R190C6, IPW65R190C, IPW65R19, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 700V 20.2A 3-Pin(3+Tab) TO-247 Tube
***et
Trans MOSFET N-CH 700V 20.2A 3-Pin(3+Tab) TO-247
***et Europe
Trans MOSFET N-CH 700V 20.2A 3-Pin TO-247 Tube
***i-Key
MOSFET N-CH 650V 20.2A TO247
***ronik
N-CH 650V 20,2A 190mOhm TO247-3 RoHSconf
***ukat
N-Ch 650V 20,2A 151W 0,19R TO247
***ineon
CoolMOS C6 combines 's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Part # Mfg. Description Stock Price
IPW65R190C6FKSA1
DISTI # IPW65R190C6FKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 20.2A TO247
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
    IPW65R190C6
    DISTI # 726-IPW65R190C6
    Infineon Technologies AGMOSFET N-Ch 700V 20.2A TO247-3 CoolMOS C6
    RoHS: Compliant
    91
    • 1:$3.8300
    • 10:$3.2600
    • 100:$2.8200
    IPW65R190C6FKSA1
    DISTI # N/A
    Infineon Technologies AGMOSFET HIGH POWER_LEGACY0
      IPW65R190C6Infineon Technologies AGPower Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
      RoHS: Compliant
      470
      • 1000:$1.9600
      • 500:$2.0600
      • 100:$2.1400
      • 25:$2.2400
      • 1:$2.4100
      IPW65R190C6FKSA1Infineon Technologies AGPower Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
      RoHS: Compliant
      4080
      • 1000:$1.9600
      • 500:$2.0600
      • 100:$2.1400
      • 25:$2.2400
      • 1:$2.4100
      IPW65R190C6FKSA1
      DISTI # IPW65R190C6
      Infineon Technologies AGN-Ch 650V 20,2A 151W 0,19R TO247
      RoHS: Compliant
      265
      • 1:€3.8200
      • 10:€1.8200
      • 50:€1.3200
      • 100:€1.2600
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      Mfr.#: IPW65R070C6 65C6070

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      Mfr.#: IPW65R080CFDFKSA1

      OMO.#: OMO-IPW65R080CFDFKSA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 700V 43.3A TO247
      IPW65R099C6S

      Mfr.#: IPW65R099C6S

      OMO.#: OMO-IPW65R099C6S-1190

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      RF Bipolar Transistors MOSFET N-Ch 650V 17.5A TO247-3
      Availability
      Stock:
      Available
      On Order:
      2000
      Enter Quantity:
      Current price of IPW65R190C6 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.94
      $2.94
      10
      $2.79
      $27.93
      100
      $2.65
      $264.60
      500
      $2.50
      $1 249.50
      1000
      $2.35
      $2 352.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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