SI4925BDY-T1-GE3

Mfr. #:: SI4925BDY-T1-GE3
Manufacturer:: Vishay
Description:: RF Bipolar Transistors MOSFET 30V 7.1A 2.0W 25mohm @ 10V
Lifecycle:: New from this manufacturer.
Datasheet:: SI4925BDY-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SI4925BDY-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: Vishay Siliconix

Product Category: FETs - Arrays

Series: TrenchFETR

Packaging: Tape & Reel (TR)

Part-Aliases: SI4925BDY-GE3

Unit-Weight: 0.006596 oz

Mounting-Style: SMD/SMT

Package-Case: 8-SOIC (0.154", 3.90mm Width)

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 2 Channel

Supplier-Device-Package: 8-SO

Configuration: Dual

FET-Type: 2 P-Channel (Dual)

Power-Max: 1.1W

Transistor-Type: 2 P-Channel

Drain-to-Source-Voltage-Vdss: 30V

Input-Capacitance-Ciss-Vds: -

FET-Feature: Logic Level Gate

Current-Continuous-Drain-Id-25°C: 5.3A

Rds-On-Max-Id-Vgs: 25 mOhm @ 7.1A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Charge-Qg-Vgs: 50nC @ 10V

Pd-Power-Dissipation: 1.1 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 12 ns

Rise-Time: 12 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 5.3 A

Vds-Drain-Source-Breakdown-Voltage: - 30 V

Rds-On-Drain-Source-Resistance: 25 mOhms

Transistor-Polarity: P-Channel

Typical-Turn-Off-Delay-Time: 60 ns

Typical-Turn-On-Delay-Time: 9 ns

Channel-Mode: Enhancement

Tags: SI4925BDY-T, SI4925BD, SI4925B, SI4925, SI492, SI49, SI4

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4925BDY-T1-GE3 Description

***ical: Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R

***ark: DUAL P CH MOSFET; Module Configuration:Dual; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-5.3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:-10V ;RoHS Compliant: Yes

SI4925BDY-T1-GE3 More Information

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI4925BDY-T1-GE3 DISTI # SI4925BDY-T1-GE3-ND	Vishay Siliconix	MOSFET 2P-CH 30V 5.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.8167
SI4925BDY-T1-GE3 DISTI # SI4925BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4925BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5039 5000:$0.4889 10000:$0.4689 15000:$0.4559 25000:$0.4439
SI4925BDY-T1-GE3 DISTI # 15R5123	Vishay Intertechnologies	DUAL P CH MOSFET,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-5.3A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.9240 1000:$0.8690 2000:$0.8250 4000:$0.7430 6000:$0.7150 10000:$0.6880
SI4925BDY-T1-GE3 DISTI # 84R8065	Vishay Intertechnologies	DUAL P CH MOSFET,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-5.3A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$1.3000 10:$1.0700 25:$0.9870 50:$0.9030 100:$0.8200 250:$0.7630 500:$0.7050
SI4925BDY-T1-GE3 DISTI # 781-SI4925BDY-GE3	Vishay Intertechnologies	MOSFET 30V 7.1A 2.0W 25mohm @ 10V RoHS: Compliant	1844	1:$1.4400 10:$1.1800 100:$0.9110 500:$0.7840 1000:$0.6190

Related products

Image	Part #	Description
	Mfr.#: SI4925BDY-T1-GE3 OMO.#: OMO-SI4925BDY-T1-GE3	MOSFET 30V 7.1A 2.0W 25mohm @ 10V
	Mfr.#: SI4925BDY-T1-E3 OMO.#: OMO-SI4925BDY-T1-E3	MOSFET 30 Volt 7.1 Amp 2.0W
	Mfr.#: SI4925BDY-T1-GE3 OMO.#: OMO-SI4925BDY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 30V 7.1A 2.0W 25mohm @ 10V
	Mfr.#: SI4925BDY-T1-E3-CUT TAPE OMO.#: OMO-SI4925BDY-T1-E3-CUT-TAPE-1190	New and Original
	Mfr.#: SI4925BDY OMO.#: OMO-SI4925BDY-1190	MOSFET 30V 7.1A 2W
	Mfr.#: SI4925BDY-E3 OMO.#: OMO-SI4925BDY-E3-1190	MOSFET 30V 7.1A 2W
	Mfr.#: SI4925BDY-T1 OMO.#: OMO-SI4925BDY-T1-1190	MOSFET Transistor, Matched Pair, P-Channel, SO
	Mfr.#: SI4925BDY-T1-E3 OMO.#: OMO-SI4925BDY-T1-E3-VISHAY	New and Original
	Mfr.#: SI4925BDY-T1-E3. OMO.#: OMO-SI4925BDY-T1-E3--1190	New and Original

Availability

Stock:: Available
On Order:: 3500
Enter Quantity:

Current price of SI4925BDY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.67~~; ~~$0.67~~

10: ~~$0.63~~; ~~$6.33~~

100: ~~$0.60~~; ~~$59.93~~

500: ~~$0.57~~; ~~$283.00~~

1000: ~~$0.53~~; ~~$532.70~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

SI4925BDY-T 5
SI4925BD 7
SI4925B 8
SI4925 25
SI492 57
SI49 329
SI4 2994

SI4925BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes