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| PartNumber | SI4925BDY-T1-GE3 | SI4925BDY-T1-E3 |
| Description | MOSFET 30V 7.1A 2.0W 25mohm @ 10V | MOSFET 30 Volt 7.1 Amp 2.0W |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | E | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Series | SI4 | SI4 |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SI4925BDY-GE3 | SI4925BDY-T1 |
| Unit Weight | 0.006596 oz | 0.006596 oz |
| Number of Channels | - | 2 Channel |
| Transistor Polarity | - | P-Channel |
| Vds Drain Source Breakdown Voltage | - | 30 V |
| Id Continuous Drain Current | - | 7.1 A |
| Rds On Drain Source Resistance | - | 25 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1 V |
| Vgs Gate Source Voltage | - | 10 V |
| Qg Gate Charge | - | 33 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 2 W |
| Configuration | - | Dual |
| Channel Mode | - | Enhancement |
| Height | - | 1.75 mm |
| Length | - | 4.9 mm |
| Transistor Type | - | 2 P-Channel |
| Width | - | 3.9 mm |
| Forward Transconductance Min | - | 20 S |
| Fall Time | - | 34 ns |
| Rise Time | - | 12 ns |
| Typical Turn Off Delay Time | - | 60 ns |
| Typical Turn On Delay Time | - | 9 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4925BDY-T1-GE3 | MOSFET 30V 7.1A 2.0W 25mohm @ 10V | |
| SI4925BDY-T1-E3 | MOSFET 30 Volt 7.1 Amp 2.0W | ||
Vishay |
SI4925BDY-T1-GE3 | RF Bipolar Transistors MOSFET 30V 7.1A 2.0W 25mohm @ 10V | |
| SI4925BDY-T1-E3 | New and Original | ||
| SI4925BDY-T1-E3-CUT TAPE | New and Original | ||
| SI4925BDY-T1 | MOSFET Transistor, Matched Pair, P-Channel, SO | ||
| SI4925BDY-T1-E3. | New and Original |