OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IPA126N10N3 G

IPA126N10N3 G
Mfr. #:
IPA126N10N3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 35A TO220FP-3 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
IPA126N10N3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPA126N10N3 G more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220FP-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
35 A
Rds On - Drain-Source Resistance:
12.6 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
9 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
33 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Tube
Height:
16.15 mm
Length:
10.65 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
4.85 mm
Brand:
Infineon Technologies
Fall Time:
4 ns
Product Type:
MOSFET
Rise Time:
6 ns
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
20 ns
Typical Turn-On Delay Time:
12 ns
Part # Aliases:
IPA126N10N3GXKSA1 IPA126N1N3GXK SP000485964
Unit Weight:
0.211644 oz
Tags
IPA126N10N3G, IPA126N10N3, IPA12, IPA1, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
IPA126N10N3GXKSA1
DISTI # IPA126N10N3GXKSA1-ND		Infineon Technologies AGMOSFET N-CH 100V 35A TO220-FP
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
  • 500:$1.0874
IPA126N10N3G
DISTI # SP000485964		Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin TO-220FP Tube (Alt: SP000485964)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.1519
  • 10:€1.0239
  • 25:€0.9209
  • 50:€0.8379
  • 100:€0.7679
  • 500:€0.7089
  • 1000:€0.6579
IPA126N10N3GXK
DISTI # IPA126N10N3GXKSA1		Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA126N10N3GXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$0.8129
  • 1000:$0.7839
  • 2000:$0.7559
  • 3000:$0.7299
  • 5000:$0.7169
IPA126N10N3GInfineon Technologies AGPower Field-Effect Transistor, 35A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		1900
  • 1000:$0.7700
  • 500:$0.8100
  • 100:$0.8400
  • 25:$0.8700
  • 1:$0.9400
IPA126N10N3 G
DISTI # 726-IPA126N10N3G		Infineon Technologies AGMOSFET N-Ch 100V 35A TO220FP-3 OptiMOS 3
RoHS: Compliant		1000
  • 1:$1.6700
  • 10:$1.4200
  • 100:$1.1300
  • 500:$0.9890
IPA126N10N3GXKSA1
DISTI # N/A		Infineon Technologies AGMOSFET MV POWER MOS0
    IPA126N10N3GXKSA1
    DISTI # 8922242P    		Infineon Technologies AGMOSFET N-CHANNEL 100V 35A OPTIMOS TO220, TU200
    • 50:£0.8790
    • 100:£0.7800
    • 500:£0.6810
    • 1000:£0.5640
    Image Part # Description
    IPA126N10NM3SXKSA1

    Mfr.#: IPA126N10NM3SXKSA1

    OMO.#: OMO-IPA126N10NM3SXKSA1

    		 MOSFET
    IPA126N10N3 G

    Mfr.#: IPA126N10N3 G

    OMO.#: OMO-IPA126N10N3-G

    		 MOSFET N-Ch 100V 35A TO220FP-3 OptiMOS 3
    IPA126N10N3GXKSA1

    Mfr.#: IPA126N10N3GXKSA1

    OMO.#: OMO-IPA126N10N3GXKSA1

    		 MOSFET MV POWER MOS
    IPA126N10N3GXK

    Mfr.#: IPA126N10N3GXK

    OMO.#: OMO-IPA126N10N3GXK-1190

    		 Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA126N10N3GXKSA1)
    IPA126N10N(126N10N)

    Mfr.#: IPA126N10N(126N10N)

    OMO.#: OMO-IPA126N10N-126N10N--1190

    		 New and Original
    IPA126N10N3

    Mfr.#: IPA126N10N3

    OMO.#: OMO-IPA126N10N3-1190

    		 New and Original
    IPA126N10N3G

    Mfr.#: IPA126N10N3G

    OMO.#: OMO-IPA126N10N3G-1190

    		 Power Field-Effect Transistor, 35A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    IPA126N10N3GXKSA1

    Mfr.#: IPA126N10N3GXKSA1

    OMO.#: OMO-IPA126N10N3GXKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 100V 35A TO220-FP
    IPA126N10N3 G

    Mfr.#: IPA126N10N3 G

    OMO.#: OMO-IPA126N10N3-G-126

    		 IGBT Transistors MOSFET N-Ch 100V 35A TO220FP-3 OptiMOS 3
    Availability
    Stock:
    Available
    On Order:
    5500
    Enter Quantity:
    Current price of IPA126N10N3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.66
    $1.66
    10
    $1.41
    $14.10
    100
    $1.13
    $113.00
    500
    $0.99
    $494.50
    1000
    $0.82
    $820.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
    Start with
    Newest Products
    More Newest Products
    Top