TGF2953

TGF2953
Mfr. #:
TGF2953
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-12GHz 12W 32V GaN P3dB @ 3GHz 41.2dBm
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2953 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TGF2953 more Information
Product Attribute
Attribute Value
Manufacturer
TriQuint (Qorvo)
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Waffle
Part-Aliases
1112257
Mounting-Style
SMD/SMT
Operating-Temperature-Range
- 65 C to + 150 C
Package-Case
Die
Technology
GaN SiC
Configuration
Single
Transistor-Type
HEMT
Gain
18.2 dB
Output-Power
41.6 dBm
Pd-Power-Dissipation
17 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 65
Operating-Frequency
15 GHz
Id-Continuous-Drain-Current
820 mA
Vds-Drain-Source-Breakdown-Voltage
32 V
Transistor-Polarity
N-Channel
Maximum-Drain-Gate-Voltage
100 V
Tags
TGF295, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TGF GaN on SiC Transistors
Qorvo TGF GaN on SiC Transistors for the Satellite, P to P, and Military communications along with Marine radar and Test and instrumentation. These are small footprint (dies) that handle high power (7W to 70W) and high frequency, up to 14GHz.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
TGF2953
DISTI # 772-TGF2953
QorvoRF JFET Transistors DC-12GHz 12W 32V GaN P3dB @ 3GHz 41.2dBm
RoHS: Compliant
50
  • 50:$43.9000
  • 100:$37.9700
1112257
DISTI # TGF2953
QorvoRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1:$25.3000
Image Part # Description
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Mfr.#: TGF2819-FS

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TGF2942

Mfr.#: TGF2942

OMO.#: OMO-TGF2942-1152

RF JFET Transistors DC-25GHz 2Watt NF 1.2dB GaN
TGF2960

Mfr.#: TGF2960

OMO.#: OMO-TGF2960-1190

New and Original
TGF60-07870787-039

Mfr.#: TGF60-07870787-039

OMO.#: OMO-TGF60-07870787-039-LEADER-TECH

THERMAL GAP FILLER, 200X200X1MM, GREY
TGF30-07870787-039

Mfr.#: TGF30-07870787-039

OMO.#: OMO-TGF30-07870787-039-LEADER-TECH

Thermal Gap Filler/Sky Blue 3.0W/m-K
Availability
Stock:
Available
On Order:
2000
Enter Quantity:
Current price of TGF2953 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$56.96
$56.96
10
$54.11
$541.07
100
$51.26
$5 125.95
500
$48.41
$24 205.90
1000
$45.56
$45 564.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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