TGF2977-SM

TGF2977-SM
Mfr. #:
TGF2977-SM
Manufacturer:
Qorvo
Description:
RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2977-SM Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
TGF2977-SM more Information
Product Attribute
Attribute Value
Manufacturer
TriQuint (Qorvo)
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Tray
Part-Aliases
1127257
Unit-Weight
0.002014 oz
Mounting-Style
SMD/SMT
Package-Case
QFN-16
Technology
GaN SiC
Configuration
Single
Transistor-Type
HEMT
Gain
13 dB
Output-Power
6 W
Pd-Power-Dissipation
8.4 W
Maximum-Operating-Temperature
+ 225 C
Operating-Frequency
DC to 12 GHz
Id-Continuous-Drain-Current
326 mA
Vds-Drain-Source-Breakdown-Voltage
32 V
Transistor-Polarity
N-Channel
Development-Kit
TGF2977-SMEVB1
Vgs-Gate-Source-Breakdown-Voltage
- 2.7 V
Tags
TGF297, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF297x GaN RF Transistor
Qorvo TGF297x GaN RF Transistors have a frequency range of DC to 12GHz. The TGF2970 transistors offer output power from 6W up to 22W. The TGF2970 transistors are constructed using a TQGaN25 process, which features field plate techniques to optimize power and efficiency at high drain bias operation. Learn More
Part # Mfg. Description Stock Price
TGF2977-SM
DISTI # 772-TGF2977-SM
QorvoRF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB
RoHS: Compliant
266
  • 1:$24.1500
  • 25:$20.8900
  • 100:$18.0700
  • 250:$16.8000
  • 500:$15.6200
TGF2977-SM-EVB
DISTI # 772-TGF2977-SM-EVB
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$875.0000
Image Part # Description
TGF2977-SM

Mfr.#: TGF2977-SM

OMO.#: OMO-TGF2977-SM

RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB
TGF2929-FS

Mfr.#: TGF2929-FS

OMO.#: OMO-TGF2929-FS

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF2953

Mfr.#: TGF2953

OMO.#: OMO-TGF2953-318

RF JFET Transistors DC-12GHz 12W 32V GaN P3dB @ 3GHz 41.2dBm
TGF2929-FL

Mfr.#: TGF2929-FL

OMO.#: OMO-TGF2929-FL-319

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF2929-FS/FL, 3.1-3.5GHZ EVB

Mfr.#: TGF2929-FS/FL, 3.1-3.5GHZ EVB

OMO.#: OMO-TGF2929-FS-FL-3-1-3-5GHZ-EVB-319

RF MOSFET Transistors DC-3.5GHz 100W Eval Board
TGF2965-SM-EVB

Mfr.#: TGF2965-SM-EVB

OMO.#: OMO-TGF2965-SM-EVB-1152

RF Development Tools
TGF2942

Mfr.#: TGF2942

OMO.#: OMO-TGF2942-1152

RF JFET Transistors DC-25GHz 2Watt NF 1.2dB GaN
TGF2961

Mfr.#: TGF2961

OMO.#: OMO-TGF2961-1190

New and Original
TGF2961-SD

Mfr.#: TGF2961-SD

OMO.#: OMO-TGF2961-SD-1190

New and Original
TGF2961-SD T/R

Mfr.#: TGF2961-SD T/R

OMO.#: OMO-TGF2961-SD-T-R-1190

New and Original
Availability
Stock:
Available
On Order:
1500
Enter Quantity:
Current price of TGF2977-SM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$23.43
$23.43
10
$22.26
$222.58
100
$21.09
$2 108.70
500
$19.92
$9 957.75
1000
$18.74
$18 744.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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