PartNumber | TGF2977-SM | TGF2978-SM | TGF2977-SM-EVB |
Description | RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB | RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB | RF Development Tools |
Manufacturer | Qorvo | Qorvo | - |
Product Category | RF JFET Transistors | RF JFET Transistors | - |
RoHS | Y | Y | - |
Transistor Type | HEMT | HEMT | - |
Technology | GaN SiC | GaN SiC | - |
Gain | 13 dB | 13 dB | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 32 V | 32 V | - |
Vgs Gate Source Breakdown Voltage | - 2.7 V | - 2.7 V | - |
Id Continuous Drain Current | 326 mA | 326 mA | - |
Output Power | 6 W | 6 W | - |
Maximum Operating Temperature | + 225 C | + 225 C | - |
Pd Power Dissipation | 8.4 W | 8.4 W | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | QFN-16 | QFN-16 | - |
Packaging | Tray | Tray | - |
Configuration | Single | Single | - |
Height | 0.203 mm | 0.203 mm | - |
Length | 3 mm | 3 mm | - |
Operating Frequency | DC to 12 GHz | DC to 12 GHz | - |
Type | GaN SiC HEMT | GaN SiC HEMT | - |
Width | 3 mm | 3 mm | - |
Brand | Qorvo | Qorvo | - |
Number of Channels | 1 Channel | 1 Channel | - |
Development Kit | TGF2977-SMEVB1 | TGF2977-SMEVB1 | - |
Moisture Sensitive | Yes | Yes | - |
Product Type | RF JFET Transistors | RF JFET Transistors | - |
Factory Pack Quantity | 50 | 50 | - |
Subcategory | Transistors | Transistors | - |
Part # Aliases | 1127257 | 1127257 | - |
Unit Weight | 0.002014 oz | 0.002014 oz | - |