TGF2978-SM

TGF2978-SM
Mfr. #:
TGF2978-SM
Manufacturer:
Qorvo
Description:
RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2978-SM Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
TGF2978-SM more Information
Product Attribute
Attribute Value
Manufacturer
TriQuint (Qorvo)
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Tray
Part-Aliases
1127373
Unit-Weight
0.004339 oz
Mounting-Style
SMD/SMT
Package-Case
QFN-20
Technology
GaN SiC
Configuration
Single
Transistor-Type
HEMT
Gain
11 dB
Output-Power
19 W
Pd-Power-Dissipation
33 W
Maximum-Operating-Temperature
+ 225 C
Operating-Frequency
DC to 12 GHz
Id-Continuous-Drain-Current
1.3 A
Vds-Drain-Source-Breakdown-Voltage
32 V
Transistor-Polarity
N-Channel
Development-Kit
TGF2978-SMEVB1
Vgs-Gate-Source-Breakdown-Voltage
- 2.7 V
Tags
TGF297, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC - 12 GHz, 20 W, 11 dB, 32 V, GaN, Plastic QFN
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF297x GaN RF Transistor
Qorvo TGF297x GaN RF Transistors have a frequency range of DC to 12GHz. The TGF2970 transistors offer output power from 6W up to 22W. The TGF2970 transistors are constructed using a TQGaN25 process, which features field plate techniques to optimize power and efficiency at high drain bias operation. Learn More
Part # Mfg. Description Stock Price
TGF2978-SM
DISTI # 772-TGF2978-SM
QorvoRF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB
RoHS: Compliant
143
  • 1:$49.6000
  • 25:$42.9000
  • 100:$37.1000
TGF2978-SM-EVB
DISTI # 772-TGF2978-SM-EVB
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$875.0000
Image Part # Description
TGF2929-HM

Mfr.#: TGF2929-HM

OMO.#: OMO-TGF2929-HM

RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
TGF2957

Mfr.#: TGF2957

OMO.#: OMO-TGF2957

RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm
TGF2954

Mfr.#: TGF2954

OMO.#: OMO-TGF2954

RF JFET Transistors DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm
TGF2941

Mfr.#: TGF2941

OMO.#: OMO-TGF2941

RF JFET Transistors DC-25GHz 4Watt NF 1.3dB GaN
TGF2936

Mfr.#: TGF2936

OMO.#: OMO-TGF2936

RF JFET Transistors DC-25GHz 10Watt NF 1.3dB GaN
TGF2929-FL

Mfr.#: TGF2929-FL

OMO.#: OMO-TGF2929-FL

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF2979-SM

Mfr.#: TGF2979-SM

OMO.#: OMO-TGF2979-SM-318

RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
TGF2929-FS/FL, 3.1-3.5GHZ EVB

Mfr.#: TGF2929-FS/FL, 3.1-3.5GHZ EVB

OMO.#: OMO-TGF2929-FS-FL-3-1-3-5GHZ-EVB-319

RF MOSFET Transistors DC-3.5GHz 100W Eval Board
TGF2929-FS

Mfr.#: TGF2929-FS

OMO.#: OMO-TGF2929-FS-319

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF2979-SM-EVB

Mfr.#: TGF2979-SM-EVB

OMO.#: OMO-TGF2979-SM-EVB-1152

RF Development Tools
Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of TGF2978-SM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$55.65
$55.65
10
$52.87
$528.68
100
$50.08
$5 008.50
500
$47.30
$23 651.25
1000
$44.52
$44 520.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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