STK800

Mfr. #:: STK800
Manufacturer:: STMicroelectronics
Description:: MOSFET Power MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: STK800 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: STK800 more Information STK800 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PolarPAK-10

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 20 A

Rds On - Drain-Source Resistance:: 7.8 mOhms

Vgs - Gate-Source Voltage:: 16 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 5.2 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 0.8 mm

Length:: 6.15 mm

Series:: STK800

Transistor Type:: 1 N-Channel

Type:: Power MOSFET

Width:: 5.16 mm

Brand:: STMicroelectronics

Forward Transconductance - Min:: 44 S

Fall Time:: 15 ns

Product Type:: MOSFET

Rise Time:: 50 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 45 ns

Typical Turn-On Delay Time:: 15 ns

Tags: STK80, STK8, STK

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STK800 Description

***et Europe: Trans MOSFET N-CH 30V 20A 10-Pin PolarPAK T/R

***icroelectronics: N-channel 30V - 0.006Ohm - 20A - PolarPAK®

***ca Corp: Power Field-Effect Transistor, 20A I(D), 30V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ser: Power MOSFET Transistors Power MOSFET

***nell: MOSFET, N CH, 30V, 20A, POLARPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 5.2W; Transistor Case Style: PolarPAK; No. of Pins: -; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Rds on Measurement: 10V

***ure Electronics: Si4156DY Series N-Channel 30 V 0.006 Ohm 6 W Surface Mount Power Mosfet - SOIC-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.0048Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:2.2V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes

***ment14 APAC: MOSFET,N CH,30V,24A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:15.7A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V

***Yang: Transistor MOSFET Array Dual N-CH 30V 30A/40A 8-Pin Power 56 T/R - Tape and Reel

***ark: MOSFET Transistor; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V ;RoHS Compliant: Yes

***rchild Semiconductor: This device includes two specialized N-Channel MOSFETs in a dua- MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.

***ment14 APAC: MOSFET,NN CH,30V,POWER56; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:22A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.0019ohm; Power Dissipation Pd:2.5W

***ure Electronics: N-Channle 30 V 22 A 10 mohm Surface Mount PowerTrench Mosfet - Power 56

***emi: N-Channel PowerTrench® MOSFET 30V, 22A, 10mΩ

*** Stop Electro: Power Field-Effect Transistor, 13.5A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***nell: MOSFET, N CH, 30V, 22A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0081ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:29W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

***ure Electronics: Single N-Channel 30 V 6.6 mOhm 20 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS

***ical: Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.8C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***emi: N-Channel PowerTrench® MOSFET, Dual CoolTM 33, 30V, 40A, 6.25mΩ

***r Electronics: Power Field-Effect Transistor, 17A I(D), 30V, 0.00625ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

***nell: MOSFET, N CH, 30V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode

***et Japan: Transistor MOSFET Array Dual N-CH 30V 25A 8-Pin PowerPAK SO T/R

***ment14 APAC: MOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:25A; Source Voltage Vds:30V; On

***nell: MOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0076ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 22W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

Market price

Part #	Mfg.	Description	Stock	Price
STK800 DISTI # 497-5123-1-ND	STMicroelectronics	MOSFET N-CH 30V 20A POLARPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	20In Stock	10:$2.5590 1:$2.8500
STK800 DISTI # 497-5123-6-ND	STMicroelectronics	MOSFET N-CH 30V 20A POLARPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	20In Stock	10:$2.5590 1:$2.8500
STK800 DISTI # 497-5123-2-ND	STMicroelectronics	MOSFET N-CH 30V 20A POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
STK800 DISTI # 511-STK800	STMicroelectronics	MOSFET Power MOSFET RoHS: Compliant	0
STK800	STMicroelectronics	20 A, 30 V, 0.0098 ohm, N-CHANNEL, Si, POWER, MOSFET	496	447:$0.4000 79:$0.4480 1:$1.2800
STK800	Vishay Semiconductors	20 A, 30 V, 0.0098 ohm, N-CHANNEL, Si, POWER, MOSFET	2400	1251:$0.5600 251:$0.6400 1:$1.6000
STK800	STMicroelectronics	20 A, 30 V, 0.0098 ohm, N-CHANNEL, Si, POWER, MOSFET	33	7:$3.0000 3:$4.0000 1:$6.0000
STK800	STMicroelectronics		3191
STK800	STMicroelectronics		42	2:$4.4800 7:$2.9120 19:$2.2400
STK800 DISTI # 1752106	STMicroelectronics	MOSFET, N CH, 30V, 20A, POLARPAK RoHS: Compliant	0	10:$3.8600 1:$4.2900

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STK800

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes