IRF9953PBF

Mfr. #:: IRF9953PBF
Manufacturer:: Infineon Technologies
Description:: MOSFET 2P-CH 30V 2.3A 8-SOIC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF9953PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Infineon Technologies

Product Category: FETs - Arrays

Series: HEXFETR

Packaging: Tube Alternate Packaging

Unit-Weight: 0.019048 oz

Mounting-Style: SMD/SMT

Package-Case: 8-SOIC (0.154", 3.90mm Width)

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 2 Channel

Supplier-Device-Package: 8-SO

Configuration: Dual

FET-Type: 2 P-Channel (Dual)

Power-Max: 2W

Transistor-Type: 2 P-Channel

Drain-to-Source-Voltage-Vdss: 30V

Input-Capacitance-Ciss-Vds: 190pF @ 15V

FET-Feature: Standard

Current-Continuous-Drain-Id-25°C: 2.3A

Rds-On-Max-Id-Vgs: 250 mOhm @ 1A, 10V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Charge-Qg-Vgs: 12nC @ 10V

Pd-Power-Dissipation: 2 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 6.9 ns

Rise-Time: 14 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: - 2.3 A

Vds-Drain-Source-Breakdown-Voltage: - 30 V

Rds-On-Drain-Source-Resistance: 250 mOhms

Transistor-Polarity: P-Channel

Typical-Turn-Off-Delay-Time: 20 ns

Typical-Turn-On-Delay-Time: 9.7 ns

Qg-Gate-Charge: 6.9 nC

Channel-Mode: Enhancement

Tags: IRF9953, IRF995, IRF99, IRF9, IRF

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF9953PBF Description

***ied Electronics & Automation: MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.25Ohm;ID -2.3A;SO-8;PD 2W;VGS +/-20V

***ure Electronics: IRF9953PBF: 30 V 2.3 A 250 mOhm SMT Hexfet Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Low RDS(on); Dynamic dv/dt Rating; Fast Switching; Dual P-Channel MOSFET

***ernational Rectifier: -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

***ical: Trans MOSFET P-CH 30V 2.3A 8-Pin SOIC

***Components: MOSFET P-Channel 30V 2.3A SOIC8

***i-Key: MOSFET 2P-CH 30V 2.3A 8-SOIC

***ronik: 2xP-CH 30V 2,3A 250mOhm SO-8 RoHSconf

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-2.3A; On Resistance, Rds(on):250mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***nell: MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:Dual P; Voltage, Vds Typ:-30V; Current, Id Cont:2.3A; Resistance, Rds On:0.25ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:10A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation:2W; Power, Pd:2W; Row Pitch:6.3mm; SMD Marking:F9953; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:2; Voltage, Vds Max:30V; Width, External:4.05mm

***ment14 APAC: MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:10A; Row Pitch:6.3mm; SMD Marking:F9953; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V

Market price

Part #	Mfg.	Description	Stock	Price
IRF9953TRPBF DISTI # IRF9953PBFCT-ND	Infineon Technologies AG	MOSFET 2P-CH 30V 2.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2738In Stock	1000:$0.4143 500:$0.5079 100:$0.6715 10:$0.8580 1:$0.9700
IRF9953TRPBF DISTI # IRF9953PBFDKR-ND	Infineon Technologies AG	MOSFET 2P-CH 30V 2.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2738In Stock	1000:$0.4143 500:$0.5079 100:$0.6715 10:$0.8580 1:$0.9700
IRF9953PBF DISTI # IRF9953PBF-ND	Infineon Technologies AG	MOSFET 2P-CH 30V 2.3A 8-SOIC RoHS: Compliant Min Qty: 3800 Container: Tube	Limited Supply - Call
IRF9953TRPBF DISTI # IRF9953PBFTR-ND	Infineon Technologies AG	MOSFET 2P-CH 30V 2.3A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Temporarily Out of Stock	4000:$0.3683
IRF9953PBF-EL DISTI # IRF9953PBF-EL	Infineon Technologies AG	Trans MOSFET P-CH 30V 2.3A 8-Pin SO Tube (Alt: IRF9953PBF-EL) RoHS: Compliant Min Qty: 95 Container: Tube	Europe - 0
IRF9953PBF DISTI # 97K2255	Infineon Technologies AG	MOSFET Transistor, Dual P Channel, 2.3 A, 30 V, 250 mohm, -10 V, -1 V RoHS Compliant: Yes	0
IRF9953PBF DISTI # 942-IRF9953PBF	Infineon Technologies AG	MOSFET DUAL -30V P-CH 20V VGS MAX RoHS: Compliant	0
IRF9953PBF	International Rectifier	INSTOCK	130
IRF9953PBF DISTI # 9102230	Infineon Technologies AG	MOSFET, DUAL, PP, LOGIC, SO-8 RoHS: Compliant	0	1:$1.4400 10:$1.1800 100:$0.9280 1000:$0.7800 2000:$0.6870

Related products

Image	Part #	Description
	Mfr.#: IRF9953TRPBF OMO.#: OMO-IRF9953TRPBF	MOSFET MOSFT DUAL PCh -30V 2.3A
	Mfr.#: IRF9952QTRPBF OMO.#: OMO-IRF9952QTRPBF	MOSFET AUTO HEXFET SO-8
	Mfr.#: IRF9910TR OMO.#: OMO-IRF9910TR-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 20V 10A 8-SOIC
	Mfr.#: IRF9956PBF OMO.#: OMO-IRF9956PBF-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 30V 3.5A 8-SOIC
	Mfr.#: IRF9910PBF-1 OMO.#: OMO-IRF9910PBF-1-1190	New and Original
	Mfr.#: IRF9952 OMO.#: OMO-IRF9952-INFINEON-TECHNOLOGIES	MOSFET N/P-CH 30V 8-SOIC
	Mfr.#: IRF9952Q OMO.#: OMO-IRF9952Q-1190	New and Original
	Mfr.#: IRF9952QTRPBF OMO.#: OMO-IRF9952QTRPBF-INFINEON-TECHNOLOGIES	MOSFET N/P-CH 30V 8-SOIC
	Mfr.#: IRF9953TR OMO.#: OMO-IRF9953TR-INFINEON-TECHNOLOGIES	MOSFET 2P-CH 30V 2.3A 8-SOIC
	Mfr.#: IRF9953TRPBF OMO.#: OMO-IRF9953TRPBF-INFINEON-TECHNOLOGIES	New and Original

Availability

Stock:: Available
On Order:: 2500
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Current price of IRF9953PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.00~~; ~~$0.00~~

10: ~~$0.00~~; ~~$0.00~~

100: ~~$0.00~~; ~~$0.00~~

500: ~~$0.00~~; ~~$0.00~~

1000: ~~$0.00~~; ~~$0.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRF9953PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes